关注
Dinh Thanh Viet
Dinh Thanh Viet
Technical Director, NXP Semiconductors
在 nxp.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Vaginal birth after cesarean section at the University of Texas.
TV Nguyen, TV Dinh, MS Suresh, RA Kinch, GD Anderson
The Journal of reproductive medicine 37 (10), 880-882, 1992
1011992
Comparison of (001),(110) and (111) uniaxial-and biaxial-strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and …
T Krishnamohan, D Kim, TV Dinh, A Pham, B Meinerzhagen, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
862008
Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers
TV Dinh, A Valavanis, LJM Lever, Z Ikonić, RW Kelsall
Physical Review B—Condensed Matter and Materials Physics 85 (23), 235427, 2012
512012
Material configurations for -type silicon-based terahertz quantum cascade lasers
A Valavanis, TV Dinh, LJM Lever, Z Ikonić, RW Kelsall
Physical Review B—Condensed Matter and Materials Physics 83 (19), 195321, 2011
322011
Investigation of the performance of strained-SiGe vertical IMOS-transistors
TV Dinh, R Kraus, C Jungemann
Solid-State Electronics 54 (9), 942-949, 2010
262010
CMOS terahertz receivers
Q Zhong, WY Choi, DY Kim, Z Ahmad, R Xu, Y Zhang, R Han, S Kshattry, ...
2018 IEEE Custom Integrated Circuits Conference (CICC), 1-8, 2018
202018
Impact ionization rates for strained Si and SiGe
TV Dinh, C Jungemann
Solid-state electronics 53 (12), 1318-1324, 2009
182009
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress
TV Dinh, SM Hong, C Jungemann
Solid-state electronics 60 (1), 58-64, 2011
162011
IEEE Conference Proceedings of International Electron Devices Meeting (IEDM)
T Krishnamohan, D Kim, TV Dinh, A Pham, B Meinerzhagen, ...
IEEE conference proceedings of international electron devices meeting (IEDM …, 2008
132008
Novel 5V-EDMOS transistor with a record/max of 450 GHz in a baseline 40nm CMOS technology
TV Dinh, J Sonsky, J Claes, O Dieball, GT Sasse, C Detcheverry
2017 IEEE International Electron Devices Meeting (IEDM), 25.5. 1-25.5. 4, 2017
92017
Design of Lange Couplers with local ground references using SiGe BiCMOS technology for mm-Wave applications
S Wane, L Leyssenne, O Tesson, O Doussin, D Bajon, D Lesénéchal, ...
2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 351-354, 2015
92015
Tech. Dig.-Int. Electron Devices Meet.
T Krishnamohan, D Kim, TV Dinh, AT Pham, B Meinerzhagen, ...
Tech. Dig.-Int. Electron Devices Meet 899, 2008
82008
A.-t. Pham, B. Meinerzhagen, C. Jungemann and K. Saraswat
T Krishnamohan, D Kim, TV Dinh
International Electron Device Meeting Tech. Dig 899, 2008
82008
Novel alternating least squares algorithm for nonnegative matrix and tensor factorizations
AH Phan, A Cichocki, R Zdunek, TV Dinh
Neural Information Processing. Theory and Algorithms: 17th International …, 2010
62010
Modeling and characterization of bond-wire arrays for distributed Chip-Package-PCB Co-design
TV Dinh, D Lesénéchal, B Domengès, L Leyssenne, D Pasquet, ...
2015 European Microwave Conference (EuMC), 1022-1025, 2015
52015
Mm-wave automotive radar: from evolution to revolution
K Doris, F Jansen, M Lont, TV Dinh, W Syed, G Carluccio, LF Tiemeijer, ...
2021 IEEE International Electron Devices Meeting (IEDM), 25.7. 1-25.7. 4, 2021
42021
An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage
TV Dinh, T Vanhoucke, A Heringa, M Al-Sa'di, P Ivo, DBM Klaassen, ...
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 33-36, 2014
42014
Germanium/silicon heterostructures for terahertz emission
RW Kelsall, VT Dinh, P Ivanov, A Valavanis, LJM Lever, Z Ikonic, P Velha, ...
ECS Transactions 50 (9), 763, 2013
42013
Ectopic tubal pregnancy
NV Hong, T Dinh
Proceedings of the First Asiatic Congress on Obstetrics and Gynecology …, 1957
41957
The future of SiGe BiCMOS: Bipolar amplifiers for high-performance millimeter-wave applications
P Magnée, D Leenaerts, M Van der Heijden, TV Dinh, I To, I Brunets
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
32021
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