| First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs E Capogreco, L Witters, H Arimura, F Sebaai, C Porret, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 65 (11), 5145-5150, 2018 | 68 | 2018 |
| Controlling water intercalation is key to a direct graphene transfer K Verguts, K Schouteden, CH Wu, L Peters, N Vrancken, X Wu, Z Li, ... ACS applied materials & interfaces 9 (42), 37484-37492, 2017 | 59 | 2017 |
| Processing technologies for advanced Ge devices R Loo, AY Hikavyy, L Witters, A Schulze, H Arimura, D Cott, J Mitard, ... ECS Journal of Solid State Science and Technology 6 (1), P14, 2016 | 58* | 2016 |
| Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration C Porret, A Hikavyy, JFG Granados, S Baudot, A Vohra, B Kunert, ... ECS Journal of Solid State Science and Technology 8 (8), P392, 2019 | 35 | 2019 |
| Structure and magnetism of Ge3Mn5 clusters A Jain, M Jamet, A Barski, T Devillers, IS Yu, C Porret, ... Journal of Applied Physics 109 (1), 2011 | 34 | 2011 |
| Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET H Arimura, G Eneman, E Capogreco, L Witters, A De Keersgieter, P Favia, ... 2018 IEEE International Electron Devices Meeting (IEDM), 21.2. 1-21.2. 4, 2018 | 27 | 2018 |
| Electrical properties of extended defects in strain relaxed GeSn S Gupta, E Simoen, R Loo, Y Shimura, C Porret, F Gencarelli, K Paredis, ... Applied Physics Letters 113 (2), 2018 | 26 | 2018 |
| Strain and correlation of self-organized nanocolumns embedded in Ge (001) S Tardif, V Favre-Nicolin, F Lançon, E Arras, M Jamet, A Barski, C Porret, ... Physical Review B—Condensed Matter and Materials Physics 82 (10), 104101, 2010 | 26 | 2010 |
| High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si SA Srinivasan, C Porret, E Vissers, P Favia, J De Coster, H Bender, R Loo, ... IEEE Journal of Quantum Electronics 56 (1), 1-7, 2019 | 22 | 2019 |
| 60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator SA Srinivasan, C Porret, S Balakrishnan, Y Ban, R Loo, P Verheyen, ... Optical Fiber Communication Conference, Tu1D. 3, 2021 | 21 | 2021 |
| Investigation of Cl2 etch in view of extremely low temperature selective epitaxial processes A Hikavyy, A Kruv, T Van Opstal, B De Vos, C Porret, R Loo Semiconductor Science and Technology 32 (11), 114006, 2017 | 19 | 2017 |
| Low temperature epitaxial growth of Ge: B and Ge0. 99Sn0. 01: B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no … A Vohra, C Porret, D Kohen, S Folkersma, J Bogdanowicz, M Schaekers, ... Japanese Journal of Applied Physics 58 (SB), SBBA04, 2019 | 18 | 2019 |
| Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells V Depauw, C Porret, M Moelants, E Vecchio, K Kennes, H Han, R Loo, ... Progress in Photovoltaics: Research and Applications 31 (12), 1315-1328, 2023 | 17 | 2023 |
| Investigation of magnetic anisotropy of (Ge, Mn) nanocolumns A Jain, M Jamet, A Barski, T Devillers, C Porret, P Bayle-Guillemaud, ... Applied Physics Letters 97 (20), 2010 | 17 | 2010 |
| High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG E Capogreco, H Arimura, L Witters, A Vohra, C Porret, R Loo, ... 2019 Symposium on VLSI Technology, T94-T95, 2019 | 14 | 2019 |
| Toward high-performance and reliable Ge channel devices for 2 nm node and beyond H Arimura, E Capogreco, A Vohra, C Porret, R Loo, E Rosseel, A Hikavyy, ... 2020 IEEE International Electron Devices Meeting (IEDM), 2.1. 1-2.1. 4, 2020 | 12 | 2020 |
| Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials J Margetis, D Kohen, C Porret, L Lima, R Khazaka, G Rengo, R Loo, ... ECS Transactions 93 (1), 7, 2019 | 12 | 2019 |
| Importance of kinetics effects in the growth of germanium nanowires by vapour–liquid–solid Molecular Beam Epitaxy C Porret, T Devillers, A Jain, R Dujardin, A Barski Journal of crystal growth 323 (1), 334-339, 2011 | 12 | 2011 |
| Contact resistivity of highly doped Si: P, Si: As, and Si: P: As Epi layers for source/drain epitaxy E Rosseel, C Porret, AY Hikavyy, R Loo, M Tirrito, B Douhard, O Richard, ... ECS Transactions 98 (5), 37, 2020 | 11 | 2020 |
| Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1− xSnx and SiyGe1− x− ySnx A Vohra, I Makkonen, G Pourtois, J Slotte, C Porret, E Rosseel, A Khanam, ... ECS Journal of Solid State Science and Technology 9 (4), 044010, 2020 | 11 | 2020 |
