Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection HW Li, BE Kardynał, P See, AJ Shields, P Simmonds, HE Beere, ... Applied Physics Letters 91 (7), 073516-073516-3, 2007 | 88 | 2007 |
Electrochemically induced amorphous-to-rock-salt phase transformation in niobium oxide electrode for Li-ion batteries P Barnes, Y Zuo, K Dixon, D Hou, S Lee, Z Ma, JG Connell, H Zhou, ... Nature Materials 21 (7), 795-803, 2022 | 87 | 2022 |
Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A,(111) B, and (110) CD Yerino, B Liang, DL Huffaker, PJ Simmonds, ML Lee Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 61 | 2017 |
Tensile-strained growth on low-index GaAs PJ Simmonds, M Larry Lee Journal of Applied Physics 112 (5), 054313, 2012 | 52 | 2012 |
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays BC Juang, RB Laghumavarapu, BJ Foggo, PJ Simmonds, A Lin, B Liang, ... Applied Physics Letters 106 (11), 111101, 2015 | 51 | 2015 |
Strain-driven quantum dot self-assembly by molecular beam epitaxy KE Sautter, KD Vallejo, PJ Simmonds Journal of Applied Physics 128 (3), 031101, 2020 | 48 | 2020 |
Strain-driven growth of GaAs (111) quantum dots with low fine structure splitting CD Yerino, PJ Simmonds, B Liang, D Jung, C Schneider, S Unsleber, ... Applied Physics Letters 105 (25), 251901, 2014 | 45 | 2014 |
Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain PJ Simmonds, CD Yerino, M Sun, B Liang, DL Huffaker, VG Dorogan, ... ACS nano 7 (6), 5017-5023, 2013 | 41 | 2013 |
Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J Simon, S Tomasulo, PJ Simmonds, M Romero, ML Lee Journal of Applied Physics 109 (1), 013708, 2011 | 39 | 2011 |
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs (Sb) cladding layers PJ Simmonds, R Babu Laghumavarapu, M Sun, A Lin, CJ Reyner, ... Applied Physics Letters 100 (24), 243108, 2012 | 38 | 2012 |
Self-assembly on (111)-oriented III-V surfaces PJ Simmonds, M Larry Lee Applied Physics Letters 99 (12), 123111, 2011 | 38 | 2011 |
Photoluminescence from In0.5Ga0.5P/GaP quantum dots coupled to photonic crystal cavities K Rivoire, S Buckley, Y Song, P Simmonds, ML Lee, J Vučković Frontiers in Optics 2011/Laser Science XXVII, OSA Technical Digest (Optical …, 2011 | 33 | 2011 |
Quantum transport in In 0.75 Ga 0.25 As quantum wires PJ Simmonds, F Sfigakis, HE Beere, DA Ritchie, M Pepper, D Anderson, ... Appl. Phys. Lett 92, 152108, 2008 | 32 | 2008 |
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence HM Ji, B Liang, PJ Simmonds, BC Juang, T Yang, RJ Young, DL Huffaker Applied Physics Letters 106 (10), 103104, 2015 | 31 | 2015 |
Self-assembled In 0.5 Ga 0.5 As quantum dots on GaP Y Song, PJ Simmonds, ML Lee Applied Physics Letters 97, 223110, 2010 | 29 | 2010 |
Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness CF Schuck, SK Roy, T Garrett, Q Yuan, Y Wang, CI Cabrera, ... Scientific reports 9 (1), 18179, 2019 | 28 | 2019 |
Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy CF Schuck, RA McCown, A Hush, A Mello, S Roy, JW Spinuzzi, B Liang, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2018 | 28 | 2018 |
Defect generation in TiO 2 nanotube anodes via heat treatment in various atmospheres for lithium-ion batteries AI Savva, KA Smith, M Lawson, SR Croft, AE Weltner, CD Jones, H Bull, ... Physical Chemistry Chemical Physics 20 (35), 22537-22546, 2018 | 28 | 2018 |
Tensile strained island growth at step-edges on GaAs (110) PJ Simmonds, ML Lee Applied Physics Letters 97 (15), 153101, 2010 | 26 | 2010 |
Improved quantum dot stacking for intermediate band solar cells using strain compensation PJ Simmonds, M Sun, RB Laghumavarapu, B Liang, AG Norman, JW Luo, ... Nanotechnology 25 (44), 445402, 2014 | 24 | 2014 |