| Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds N Mounet, M Gibertini, P Schwaller, D Campi, A Merkys, A Marrazzo, ... Nature nanotechnology 13 (3), 246-252, 2018 | 1661 | 2018 |
| Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene T Sohier, M Calandra, F Mauri Physical Review B 96 (7), 075448, 2017 | 259 | 2017 |
| Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations T Sohier, M Calandra, F Mauri Physical Review B 94 (8), 085415, 2016 | 196 | 2016 |
| Electron–phonon interactions and the intrinsic electrical resistivity of graphene CH Park, N Bonini, T Sohier, G Samsonidze, B Kozinsky, M Calandra, ... Nano letters 14 (3), 1113-1119, 2014 | 196 | 2014 |
| Breakdown of optical phonons' splitting in two-dimensional materials T Sohier, M Gibertini, M Calandra, F Mauri, N Marzari Nano Letters 17 (6), 3758-3763, 2017 | 159 | 2017 |
| Phonon-limited resistivity of graphene by first-principles calculations: Electron-phonon interactions, strain-induced gauge field, and Boltzmann equation T Sohier, M Calandra, CH Park, N Bonini, N Marzari, F Mauri Physical Review B 90 (12), 125414, 2014 | 144 | 2014 |
| Mobility of two-dimensional materials from first principles in an accurate and automated framework T Sohier, D Campi, N Marzari, M Gibertini Physical Review Materials 2 (11), 114010, 2018 | 139 | 2018 |
| Enhanced electron-phonon interaction in multivalley materials T Sohier, E Ponomarev, M Gibertini, H Berger, N Marzari, N Ubrig, ... Physical Review X 9 (3), 031019, 2019 | 99 | 2019 |
| Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ... ACS nano 15 (7), 11285-11295, 2021 | 62 | 2021 |
| Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ... arXiv preprint arXiv:1909.09523, 2019 | 41 | 2019 |
| Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc Applied Physics Letters 118 (10), 2021 | 30 | 2021 |
| Valley-engineering mobilities in two-dimensional materials T Sohier, M Gibertini, D Campi, G Pizzi, N Marzari Nano letters 19 (6), 3723-3729, 2019 | 29 | 2019 |
| Density-functional calculation of static screening in two-dimensional materials: The long-wavelength dielectric function of graphene T Sohier, M Calandra, F Mauri Physical Review B 91 (16), 165428, 2015 | 28 | 2015 |
| Ultralow-voltage design of graphene PN junction quantum reflective switch transistor T Sohier, B Yu Applied Physics Letters 98 (21), 2011 | 18 | 2011 |
| Remote free-carrier screening to boost the mobility of Fröhlich-limited two-dimensional semiconductors T Sohier, M Gibertini, MJ Verstraete Physical Review Materials 5 (2), 024004, 2021 | 16 | 2021 |
| Profiling novel high-conductivity 2D semiconductors T Sohier, M Gibertini, N Marzari 2D Materials 8 (1), 015025, 2020 | 12 | 2020 |
| Electrons and phonons in graphene: electron-phonon coupling, screening and transport in the field effect setup T Sohier Université Pierre et Marie Curie-Paris VI, 2015 | 12 | 2015 |
| Electron-phonon interaction and phonon frequencies in two-dimensional doped semiconductors F Macheda, T Sohier, P Barone, F Mauri Physical Review B 107 (9), 094308, 2023 | 9 | 2023 |
| Electric field exfoliation and high-TC superconductivity in field-effect hole-doped hydrogenated diamond (111) D Romanin, T Sohier, D Daghero, F Mauri, RS Gonnelli, M Calandra Applied Surface Science 496, 143709, 2019 | 9 | 2019 |
| Infrared-active phonons in one-dimensional materials and their spectroscopic signatures N Rivano, N Marzari, T Sohier npj Computational Materials 9 (1), 194, 2023 | 5 | 2023 |
Nicola MarzariÉcole Polytechnique Fédérale de Lausanne (EPFL), and Paul Scherrer Institut (PSI)在 epfl.ch 的电子邮件经过验证
