受强制性开放获取政策约束的文章 - gabriele fisichella了解详情
无法在其他位置公开访问的文章：5 篇
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
强制性开放获取政策： European Commission
Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer
G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...
ACS applied materials & interfaces 9 (8), 7761-7771, 2017
强制性开放获取政策： Government of Italy
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure
G Fisichella, G Greco, F Roccaforte, F Giannazzo
Applied Physics Letters 105 (6), 2014
强制性开放获取政策： Government of Italy
High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)
F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, ...
Journal of crystal growth 393, 150-155, 2014
强制性开放获取政策： Government of Italy
Conductive Atomic Force Microscopy of Two‐Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2
F Giannazzo, G Fisichella, G Greco, P Fiorenza, F Roccaforte
Conductive Atomic Force Microscopy: Applications in Nanomaterials, 163-185, 2017
强制性开放获取政策： Government of Italy
可在其他位置公开访问的文章：3 篇
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
Beilstein journal of nanotechnology 8 (1), 254-263, 2017
强制性开放获取政策： Government of Italy
Advances in the fabrication of graphene transistors on flexible substrates
G Fisichella, SL Verso, S Di Marco, V Vinciguerra, E Schilirò, S Di Franco, ...
Beilstein Journal of Nanotechnology 8 (1), 467-474, 2017
强制性开放获取政策： Government of Italy
Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors
F Giannazzo, G Fisichella, G Greco, E Schilirò, I Deretzis, R Lo Nigro, ...
physica status solidi (a) 215 (10), 1700653, 2018
强制性开放获取政策： Government of Italy
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