| Reliability scaling issues for nanoscale devices W McMahon, A Haggag, K Hess IEEE Transactions on Nanotechnology 2 (1), 33-38, 2003 | 120 | 2003 |
| Understanding SRAM high-temperature-operating-life NBTI: Statistics and permanent vs recoverable damage A Haggag, G Anderson, S Parihar, D Burnett, G Abeln, J Higman, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 76 | 2007 |
| MOSFET degradation kinetics and its simulation O Penzin, A Haggag, W McMahon, E Lyumkis, K Hess IEEE Transactions on Electron Devices 50 (6), 1445-1450, 2003 | 74 | 2003 |
| High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures A Haggag, W McMahon, K Hess, K Cheng, J Lee, J Lyding 2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001 | 69 | 2001 |
| Universality of NBTI-From devices to circuits and products S Mahapatra, V Huard, A Kerber, V Reddy, S Kalpat, A Haggag 2014 IEEE International Reliability Physics Symposium, 3B. 1.1-3B. 1.8, 2014 | 61 | 2014 |
| Simulation of Si-SiO/sub 2/defect generation in CMOS chips: from atomistic structure to chip failure rates K Hess, A Haggag, W McMahon, B Fischer, K Cheng, J Lee, J Lyding International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 52 | 2000 |
| The physics of determining chip reliability K Hess, A Haggag, W McMahon, K Cheng, J Lee, J Lyding IEEE Circuits and Devices Magazine 17 (3), 33-38, 2001 | 40 | 2001 |
| Realistic projections of product fails from NBTI and TDDB A Haggag, M Moosa, N Liu, D Burnett, G Abeln, M Kuffler, K Forbes, ... 2006 IEEE International Reliability Physics Symposium Proceedings, 541-544, 2006 | 30 | 2006 |
| Microstructure modified HfO/sub 2/using Zr addition with Ta/sub x/C/sub y/gate for improved device performance and reliability RI Hegde, DH Triyoso, PJ Tobin, S Kalpat, ME Ramon, HH Tseng, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 35-38, 2005 | 28 | 2005 |
| On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics JK Schaeffer, DC Gilmer, S Samavedam, M Raymond, A Haggag, ... Journal of applied physics 102 (7), 2007 | 25 | 2007 |
| Physical model for the power-law voltage and current acceleration of TDDB A Haggag, N Liu, D Menke, M Moosa Microelectronics Reliability 45 (12), 1855-1860, 2005 | 25 | 2005 |
| Analytical theory of semiconductor pn junctions and the transition between depletion and quasineutral region A Haggag, K Hess IEEE Transactions on Electron Devices 47 (8), 1624-1629, 2000 | 23 | 2000 |
| Defect passivation with fluorine in a Ta/sub x/C/high-K gate stack for enhanced device threshold voltage stability and performance HH Tseng, PJ Tobin, EA Hebert, S Kalpat, ME Ramon, L Fonseca, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 19 | 2005 |
| Realistic projections of product Fmax shift and statistics due to HCI and NBTI A Haggag, M Lemanski, G Anderson, P Abramowitz, M Moosa 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 18 | 2007 |
| A probabilistic-physics-of-failure/short-time-test approach to reliability assurance for high-performance chips: Models for deep-submicron transistors and optical interconnects A Haggag, W McMahon, K Hess, K Cheng, J Lee, J Lyding 2000 IEEE International Integrated Reliability Workshop Final Report (Cat …, 2000 | 11 | 2000 |
| Impact of Scaling on CMOS Chip Failure Rate, and Design Rules for Hot Carrier Reliability A Haggag, W McMahon, K Hess, B Fischer, LF Register VLSI Design 13 (1-4), 111-115, 2001 | 9 | 2001 |
| Computational modeling of process induced damage during plasma clean S Rauf, A Haggag, M Moosa, PLG Ventzek Journal of applied physics 100 (2), 2006 | 8 | 2006 |
| Protecting against emerging vmin failures in advanced technology nodes JKJ Lee, A Haggag, W Eklow 2014 International Test Conference, 1-7, 2014 | 7 | 2014 |
| Reliability/yield trade-off in mitigating “no trouble found” field returns A Haggag, N Sumikawa, A Shaukat 2015 IEEE 21st International On-Line Testing Symposium (IOLTS), 174-175, 2015 | 6 | 2015 |
| Realistic 55nm IC Failure In Time (FIT) estimates from automotive field returns A Haggag, A Barr, K Walker, L Winemberg 2013 IEEE International Reliability Physics Symposium (IRPS), 2E. 4.1-2E. 4.4, 2013 | 6 | 2013 |
