受强制性开放获取政策约束的文章 - Nashrah Afroze了解详情
无法在其他位置公开访问的文章：2 篇
Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications
D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策： US National Science Foundation
Interfacial Oxide Layer Scavenging in Ferroelectric HfZrO-Based MOS Structures With Ge Channel for Reduced Write Voltages
C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ...
IEEE Transactions on Electron Devices, 2023
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：1 篇
Remote oxygen scavenging of the interfacial oxide layer in ferroelectric hafnium–zirconium oxide-based metal–oxide–semiconductor structures
N Tasneem, H Kashyap, K Chae, C Park, P Lee, SF Lombardo, N Afroze, ...
ACS Applied Materials & Interfaces 14 (38), 43897-43906, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
出版信息和资助信息由计算机程序自动确定