| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 298 | 2018 |
| Design and fabrication of planar guard ring termination for high-voltage SiC diodes DC Sheridan, G Niu, JN Merrett, JD Cressler, C Ellis, CC Tin Solid-State Electronics 44 (8), 1367-1372, 2000 | 147 | 2000 |
| A new" mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors G Zhang, JD Cressler, G Niu, AJ Joseph IEEE Transactions on Electron Devices 49 (12), 2151-2156, 2002 | 133 | 2002 |
| A unified approach to RF and microwave noise parameter modeling in bipolar transistors G Niu, JD Cressler, S Zhang, WE Ansley, CS Webster, DL Harame IEEE Transactions on Electron Devices 48 (11), 2568-2574, 2001 | 130 | 2001 |
| Noise in SiGe HBT RF technology: Physics, modeling, and circuit implications G Niu Proceedings of the IEEE 93 (9), 1583-1597, 2005 | 123 | 2005 |
| Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST) P Marshall, M Carts, S Currie, R Reed, B Randall, K Fritz, K Kennedy, ... IEEE transactions on nuclear science 52 (6), 2446-2454, 2005 | 111 | 2005 |
| RF linearity characteristics of SiGe HBTs G Niu, Q Liang, JD Cressler, CS Webster, DL Harame IEEE Transactions on Microwave Theory and Techniques 49 (9), 1558-1565, 2001 | 108 | 2001 |
| A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs Q Liang, JD Cressler, G Niu, Y Lu, G Freeman, DC Ahlgren, RM Malladi, ... IEEE Transactions on Microwave Theory and Techniques 51 (11), 2165-2174, 2003 | 107 | 2003 |
| A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology G Niu, JD Cressler, SJ Mathew, S Subbanna IEEE Transactions on Electron Devices 46 (9), 1912-1914, 1999 | 103 | 1999 |
| Optimization of SiGe HBTs for operation at high current densities AJ Joseph, JD Cressler, DM Richey, G Niu IEEE Transactions on Electron Devices 46 (7), 1347-1354, 1999 | 93 | 1999 |
| Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique Q Liang, WM Kuo, J Cressler, G Niu, AJ Joseph, DL Harame Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated …, 2004 | 83 | 2004 |
| An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations JD Cressler, R Krithivasan, G Zhang, G Niu, PW Marshall, HS Kim, ... IEEE Transactions on Nuclear Science 49 (6), 3203-3207, 2002 | 83 | 2002 |
| Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits RA Reed, PW Marshall, JC Pickel, MA Carts, B Fodness, G Niu, K Fritz, ... IEEE Transactions on Nuclear Science 50 (6), 2184-2190, 2003 | 81 | 2003 |
| Design of single and multiple zone junction termination extension structures for SiC power devices DC Sheridan, G Niu, JD Cressler Solid-State Electronics 45 (9), 1659-1664, 2001 | 81 | 2001 |
| Transistor noise in SiGe HBT RF technology G Niu, JD Cressler, Z Jin, S Zhang, JB Juraver, M Borgarino, R Plana, ... Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2000 | 80 | 2000 |
| An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ... IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007 | 70 | 2007 |
| Investigation of single-event transients in voltage-controlled oscillators W Chen, V Pouget, HJ Barnaby, JD Cressler, G Niu, P Fouillat, Y Deval, ... IEEE transactions on nuclear science 50 (6), 2081-2087, 2003 | 70 | 2003 |
| Hot electron and hot hole degradation of UHV/CVD SiGe HBT's U Gogineni, JD Cressler, G Niu, DL Harame IEEE Transactions on electron devices 47 (7), 1440-1448, 2000 | 64 | 2000 |
| Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's G Niu, JD Cressler, S Zhang, U Gogineni, DC Ahlgren IEEE Transactions on Electron Devices 46 (5), 1007-1015, 1999 | 64 | 1999 |
| An investigation of the spatial location of proton-induced traps in SiGe HBTs JM Roldan, G Niu, WE Ansley, JD Cressler, SD Clark, DC Ahlgren IEEE Transactions on Nuclear Science 45 (6), 2424-2429, 1998 | 64 | 1998 |
