受强制性开放获取政策约束的文章 - Susana Pérez了解详情
无法在其他位置公开访问的文章：4 篇
Optimization of the epilayer design for the fabrication of doped GaN planar Gunn diodes
S Garcia-Sanchez, I Iniguez-de-la-Torre, S Perez, T Gonzalez, J Mateos
IEEE Transactions on Electron Devices 69 (2), 514-520, 2021
强制性开放获取政策： Government of Spain
Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
T González, B Orfao, S Pérez, J Mateos, BG Vasallo
Applied Physics Express 16 (2), 024003, 2023
强制性开放获取政策： Government of Spain
Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations
S García, I Íñiguez-de-la-Torre, Ó García-Pérez, J Mateos, T González, ...
2015 10th Spanish Conference on Electron Devices (CDE), 1-4, 2015
强制性开放获取政策： Government of Spain
Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications
D Pardo, S Pérez, J Grajal, J Mateos, T González
2011 21st International Conference on Noise and Fluctuations, 106-109, 2011
强制性开放获取政策： Government of Spain
可在其他位置公开访问的文章：32 篇
Comparative Monte Carlo analysis of InP-and GaN-based gunn diodes
S García, S Pérez, I Íñiguez-De-La-Torre, J Mateos, T González
Journal of Applied Physics 115 (4), 2014
强制性开放获取政策： Government of Spain
Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations
S García, I Íñiguez-de-la-Torre, J Mateos, T González, S Pérez
Semiconductor Science and Technology 31 (6), 065005, 2016
强制性开放获取政策： Government of Spain
An assessment of available models for the design of Schottky-based multipliers up to THz frequencies
D Pardo, J Grajal, CG Perez-Moreno, S Perez
IEEE Transactions on Terahertz Science and Technology 4 (2), 277-287, 2014
强制性开放获取政策： Government of Spain
Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
S García, I Iñiguez-De-La-Torre, S Pérez, J Mateos, T González
Journal of Applied Physics 114 (7), 2013
强制性开放获取政策： Government of Spain
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
H Sánchez-Martín, S Sánchez-Martín, I Íñiguez-De-La-Torre, S Pérez, ...
Semiconductor Science and Technology 33 (9), 095016, 2018
强制性开放获取政策： Government of Spain
Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes
B Orfao, BG Vasallo, D Moro-Melgar, S Perez, J Mateos, T Gonzalez
IEEE Transactions on Electron Devices 67 (9), 3530-3535, 2020
强制性开放获取政策： Government of Spain
Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
H Sánchez-Martín, J Mateos, JA Novoa, JA Delgado-Notario, YM Meziani, ...
Applied Physics Letters 113 (4), 2018
强制性开放获取政策： Government of Spain
Non-linear thermal resistance model for the simulation of high power GaN-based devices
S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ...
Semiconductor Science and Technology 36 (5), 055002, 2021
强制性开放获取政策： Government of Spain
Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
S García, I Íñiguez-de-la-Torre, O García-Pérez, J Mateos, T González, ...
Semiconductor Science and Technology 30 (3), 035001, 2015
强制性开放获取政策： Government of Spain
Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes
O García-Pérez, Y Alimi, A Song, I Íñiguez-de-la-Torre, S Pérez, J Mateos, ...
Applied Physics Letters 105 (11), 2014
强制性开放获取政策： Government of Spain
Electrical and noise modeling of GaAs Schottky diode mixers in the THz band
D Pardo, J Grajal, S Pérez
IEEE Transactions on Terahertz Science and Technology 6 (1), 69-82, 2015
强制性开放获取政策： Government of Spain
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
H Sanchez-Martin, Ó García-Pérez, S Pérez, P Altuntas, V Hoel, ...
Semiconductor Science and Technology 32 (3), 035011, 2017
强制性开放获取政策： Government of Spain
Design and fabrication of planar gunn nanodiodes based on doped GaN
J Mateos, T González, I Iniguez-De-La-Torre, S García, S Pérez, ...
2019 IEEE Asia-Pacific Microwave Conference (APMC), 971-973, 2019
强制性开放获取政策： Government of Spain
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
B Orfao, G Di Gioia, BG Vasallo, S Pérez, J Mateos, Y Roelens, ...
Journal of Applied Physics 132 (4), 2022
强制性开放获取政策： Agence Nationale de la Recherche, Government of Spain
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
B Orfao, BG Vasallo, S Pérez, J Mateos, D Moro-Melgar, M Zaknoune, ...
IEEE Transactions on Electron Devices 68 (9), 4296-4301, 2021
强制性开放获取政策： Government of Spain
GaN-based SSD structure for THz applications
M Agrawal, D Nethaji, K Radhakrishnan, C Gaquiere, G Ducournau, ...
2019 IEEE Asia-Pacific Microwave Conference (APMC), 213-215, 2019
强制性开放获取政策： Government of Spain
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