受强制性开放获取政策约束的文章 - I. Pintilie了解详情
无法在其他位置公开访问的文章：8 篇
Stable radiation-induced donor generation and its influence on the radiation tolerance of silicon diodes
I Pintilie, M Buda, E Fretwurst, G Lindström, J Stahl
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
强制性开放获取政策： German Research Foundation
Epitaxial silicon detectors for particle tracking—Radiation tolerance at extreme hadron fluences
G Lindström, I Dolenc, E Fretwurst, F Hönniger, G Kramberger, M Moll, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
强制性开放获取政策： German Research Foundation
Radiation tolerance of epitaxial silicon detectors at very large proton fluences
G Lindström, E Fretwurst, F Hönniger, G Kramberger, M Möller-Ivens, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
强制性开放获取政策： German Research Foundation
Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5 MeV and 15 MeV
R Radu, E Fretwurst, R Klanner, G Lindstroem, I Pintilie
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013
强制性开放获取政策： European Commission
Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
Y Gurimskaya, PD de Almeida, MF Garcia, IM Suau, M Moll, E Fretwurst, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2020
强制性开放获取政策： European Commission
Effect of strain and stoichiometry on the ferroelectric and pyroelectric properties of the epitaxial Pb (Zr0. 2Ti0. 8) O3 films deposited on Si wafers
C Chirila, GA Boni, LD Filip, M Husanu, S Neatu, CM Istrate, G Le Rhun, ...
Materials Science and Engineering: B 266, 115042, 2021
强制性开放获取政策： Agence Nationale de la Recherche
Radiation-induced point-and cluster-related defects in epitaxial p-type silicon diodes
Y Gurimskaya, IM Suau, M Moll, E Fretwurst, L Makarenko, I Pintilie, ...
2019 19th European Conference on Radiation and Its Effects on Components and …, 2019
强制性开放获取政策： European Commission
Quasi-static electric field–temperature diagrams in epitaxial relaxor ferroelectric films
M Tyunina, I Pintilie, J Levoska, L Pintilie
Phase Transitions 88 (1), 74-81, 2015
强制性开放获取政策： Academy of Finland, Finnish Funding Agency for Innovation
可在其他位置公开访问的文章：17 篇
Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
C Besleaga, GE Stan, I Pintilie, P Barquinha, E Fortunato, R Martins
Applied Surface Science 379, 270-276, 2016
强制性开放获取政策： Fundação para a Ciência e a Tecnologia, Portugal
Study of point-and cluster-defects in radiation-damaged silicon
EM Donegani, E Fretwurst, E Garutti, R Klanner, G Lindstroem, I Pintilie, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018
强制性开放获取政策： Helmholtz Association, Federal Ministry of Education and Research, Germany
The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
C Liao, E Fretwurst, E Garutti, J Schwandt, M Moll, A Himmerlich, ...
IEEE Transactions on Nuclear Science 69 (3), 576-586, 2022
强制性开放获取政策： German Research Foundation, European Commission
Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
A Himmerlich, N Castello-Mor, EC Rivera, Y Gurimskaya, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2023
强制性开放获取政策： European Commission
BaTiO3 nanocubes-Gelatin composites for piezoelectric harvesting: Modeling and experimental study
CE Ciomaga, N Horchidan, L Padurariu, RS Stirbu, V Tiron, FM Tufescu, ...
Ceramics International 48 (18), 25880-25893, 2022
强制性开放获取政策： Slovenian Research Agency
Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O3 films through Nb (n-type) and Fe (p-type) doping
CF Chirila, V Stancu, GA Boni, I Pasuk, L Trupina, LD Filip, C Radu, ...
Scientific reports 12 (1), 755, 2022
强制性开放获取政策： Federal Ministry of Education and Research, Germany
Accidental Impurities in Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films Grown by Pulsed Laser Deposition and Their Impact on the Macroscopic Electric Properties
GA Boni, CF Chirila, V Stancu, L Amarande, I Pasuk, L Trupina, CM Istrate, ...
Nanomaterials 11 (5), 1177, 2021
强制性开放获取政策： Federal Ministry of Education and Research, Germany
Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon
LF Makarenko, SB Lastovski, HS Yakushevich, E Gaubas, J Pavlov, ...
physica status solidi (a) 216 (17), 1900354, 2019
强制性开放获取政策： European Commission
The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric
GA Boni, CM Istrate, C Zacharaki, P Tsipas, S Chaitoglou, EK Evangelou, ...
physica status solidi (a) 218 (4), 2000500, 2021
强制性开放获取政策： European Commission
Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI-and Cz-silicon
C Liao, E Fretwurst, E Garutti, J Schwandt, L Makarenko, I Pintilie, LD Filip, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2023
强制性开放获取政策： German Research Foundation, European Commission
Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
C Liao, E Fretwurst, E Garutti, J Schwandt, I Pintilie, A Nitescu, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2024
强制性开放获取政策： European Commission
Effect of pressure on the dynamics of iodide defects in methylammonium lead iodide: An atomistic simulation
RE Brophy, M Kateb, K Torfason, GA Nemnes, HG Svavarsson, I Pintilie, ...
The Journal of Physical Chemistry C 127 (17), 7938-7943, 2023
强制性开放获取政策： European Commission
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