| A 21 nm high performance 64 Gb MLC NAND flash memory with 400 MB/s asynchronous toggle DDR interface C Kim, J Ryu, T Lee, H Kim, J Lim, J Jeong, S Seo, H Jeon, B Kim, I Lee, ... IEEE Journal of Solid-State Circuits 47 (4), 981-989, 2012 | 80 | 2012 |
| 7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG= 640µs and 800MB/s I/O rate S Lee, J Lee, I Park, J Park, S Yun, M Kim, J Lee, M Kim, K Lee, T Kim, ... 2016 IEEE International Solid-State Circuits Conference (ISSCC), 138-139, 2016 | 53 | 2016 |
| 30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface J Cho, DC Kang, J Park, SW Nam, JH Song, BK Jung, J Lyu, H Lee, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 426-428, 2021 | 31 | 2021 |
| Nonvolatile memory device CH Kim, BS Lim, PS Kwak, HS Jeon US Patent 10,446,575, 2019 | 21 | 2019 |
| Non-volatile memory devices and methods of fabricating the same DK Yun, CH Kim, PS Kwak, HS Jeon US Patent 10,559,577, 2020 | 12 | 2020 |
| Flash memory device and method of testing a flash memory device HS Jeon, DH Kim US Patent 7,710,788, 2010 | 7 | 2010 |
| Memory device, memory system and programming method HS Jeon, LEE Ji-Sang, OS Kwon US Patent App. 12/715,692, 2010 | 6 | 2010 |
| Flash memory device and voltage generating circuit for the same HS Jeon, DH Kim US Patent 7,486,573, 2009 | 6 | 2009 |
| Voltage generation circuit and flash memory device including the same HS Jeon US Patent 7,940,117, 2011 | 5 | 2011 |
| Integrated circuit device S Nam, Y Kwon, H Jeon US Patent App. 16/935,607, 2021 | 4 | 2021 |
| Semiconductor memory device having fuse circuits and method of controlling the same HS Jeon, DH Kim US Patent 7,738,309, 2010 | 4 | 2010 |
| Trimming circuits including isolated well regions and related memory devices HS Jeon, SK Lee US Patent App. 11/240,236, 2006 | 4 | 2006 |
| Memory device including pass transistor circuit SY Kim, D Byeon, P Kwak, H Jeon US Patent 11,462,275, 2022 | 3 | 2022 |
| Semiconductor memory device including a capacitor C Kim, P Kwak, KIM ChaeHoon, H Jeon, J Park, LIM Bongsoon US Patent 10,546,875, 2020 | 3 | 2020 |
| Three-dimensional semiconductor memory device LIM Bongsoon, SW Nam, SW Park, SW Shim, H Jeon, Y Choi US Patent 11,515,325, 2022 | 2 | 2022 |
| Bitline bias circuit and nor flash memory device including the bitline bias circuit HS Jeon, SK Lee US Patent 7,656,714, 2010 | 2 | 2010 |
| 13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5 Gb/mm2 Areal Density and a 3.2 GB/s High-Speed IO Rate W Jung, H Kim, DB Kim, TH Kim, N Lee, D Shin, M Kim, Y Rho, HJ Lee, ... 2024 IEEE International Solid-State Circuits Conference (ISSCC) 67, 236-237, 2024 | 1 | 2024 |
| Semiconductor device and electronic system including same CH Yu, H Jeon US Patent App. 17/704,701, 2023 | 1 | 2023 |
| Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same Y Choi, LIM Bongsoon, H Jeon, J Yu US Patent 11,581,297, 2023 | 1 | 2023 |
| Integrated circuit device and electronic system including same H Shin, J Park, H Jeon, P Kwak US Patent App. 17/513,132, 2022 | 1 | 2022 |
