| Mechanisms of recombination in GaN photodetectors F Binet, JY Duboz, E Rosencher, F Scholz, V Härle Applied physics letters 69 (9), 1202-1204, 1996 | 190 | 1996 |
| A self‐consistent model for quantum well infrared photodetectors L Thibaudeau, P Bois, JY Duboz Journal of applied physics 79 (1), 446-454, 1996 | 174 | 1996 |
| High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition F Binet, JY Duboz, J Off, F Scholz Physical Review B 60 (7), 4715, 1999 | 149 | 1999 |
| GaN as seen by the industry JY Duboz physica status solidi (a) 176 (1), 5-14, 1999 | 102 | 1999 |
| Electronic transport properties of epitaxial erbium silicide/silicon heterostructures JY Duboz, PA Badoz, FA d’Avitaya, JA Chroboczek Applied physics letters 55 (1), 84-86, 1989 | 101 | 1989 |
| Band-gap energy of as a function of N content JY Duboz, JA Gupta, ZR Wasilewski, J Ramsey, RL Williams, GC Aers, ... Physical Review B 66 (8), 085313, 2002 | 81 | 2002 |
| Properties of a photovoltaic detector based on an -type GaN Schottky barrier F Binet, JY Duboz, N Laurent, E Rosencher, O Briot, RL Aulombard Journal of applied physics 81 (9), 6449-6454, 1997 | 75 | 1997 |
| Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions JY Duboz US Patent 5,818,066, 1998 | 70 | 1998 |
| Growth, characterization and electrical properties of epitaxial erbium silicide FA d'Avitaya, PA Badoz, Y Campidelli, JA Chroboczek, JY Duboz, A Perio, ... Thin Solid Films 184 (1-2), 283-293, 1990 | 69 | 1990 |
| Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks I Roland, M Gromovyi, Y Zeng, M El Kurdi, S Sauvage, C Brimont, ... Scientific reports 6 (1), 34191, 2016 | 68 | 2016 |
| Tunnel current in quantum dot infrared photodetectors JY Duboz, HC Liu, ZR Wasilewski, M Byloss, R Dudek Journal of applied physics 93 (2), 1320-1322, 2003 | 63 | 2003 |
| Epitaxial erbium silicide films on Si (111) surface: Fabrication, structure, and electrical properties JY Duboz, PA Badoz, A Perio, JC Oberlin, FA d'Avitaya, Y Campidelli, ... Applied Surface Science 38 (1-4), 171-177, 1989 | 62 | 1989 |
| Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers JY Duboz, PA Badoz, FA d’Avitaya, E Rosencher Physical Review B 40 (15), 10607, 1989 | 56 | 1989 |
| Electric field effects on excitons in gallium nitride F Binet, JY Duboz, E Rosencher, F Scholz, V Härle Physical Review B 54 (11), 8116, 1996 | 53 | 1996 |
| Electrical transport properties in epitaxial codeposited CoSi2 layers on <111> Si JY Duboz, PA Badoz, E Rosencher, J Henz, M Ospelt, H Von Känel, ... Applied physics letters 53 (9), 788-790, 1988 | 52 | 1988 |
| Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation JY Duboz, JL Reverchon, D Adam, B Damilano, N Grandjean, F Semond, ... Journal of applied physics 92 (9), 5602-5604, 2002 | 51 | 2002 |
| An etching‐free approach toward large‐scale light‐emitting metasurfaces G Brière, P Ni, S Héron, S Chenot, S Vézian, V Brändli, B Damilano, ... Advanced Optical Materials 7 (14), 1801271, 2019 | 50 | 2019 |
| Intersubband transitions in InGaNAs/GaAs quantum wells JY Duboz, JA Gupta, M Byloss, GC Aers, HC Liu, ZR Wasilewski Applied physics letters 81 (10), 1836-1838, 2002 | 50 | 2002 |
| Influence of surface defects on the characteristics of GaN Schottky diodes JY Duboz, F Binet, N Laurent, E Rosencher, F Scholz, V Harle, O Briot, ... MRS Online Proceedings Library (OPL) 449, 1085, 1996 | 49 | 1996 |
| Semiconductor hybrid component JY Duboz, E Rosencher, P Bois US Patent 5,726,500, 1998 | 48 | 1998 |
