| 3.8 MV/cm Breakdown Strength of MOVPE-Grown Sn-doped β-Ga2O3 MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ... IEEE Electron Device Letters, 2016 | 598 | 2016 |
| Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ... Applied Physics Letters 109 (21), 2016 | 381 | 2016 |
| β-Ga2O3 MOSFETs for Radio Frequency Operation AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ... IEEE Electron Device Letters 38 (6), 790-793, 2017 | 314 | 2017 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 254 | 2022 |
| Recessed-Gate Enhancement-Mode β-Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ... IEEE Electron Device Letters 39 (1), 67-70, 2018 | 231 | 2018 |
| Ge-Doped β-Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 200 | 2017 |
| Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ... Applied Physics Letters 111 (1), 2017 | 182 | 2017 |
| Superheating Water by CW Excitation of Gold Nanodots MT Carlson, AJ Green, HH Richardson Nano Letters, 1534-1537, 2012 | 153 | 2012 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 127 | 2019 |
| High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ... Applied Physics Letters 110 (14), 2017 | 92 | 2017 |
| ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ... IEEE Electron Device Letters 40 (7), 1056-1059, 2019 | 83 | 2019 |
| Increasing efficiency, speed, and responsivity of vanadium dioxide based photothermally driven actuators using single-wall carbon nanotube thin-films T Wang, D Torres, FE Fernández, AJ Green, C Wang, N Sepúlveda ACS nano 9 (4), 4371-4378, 2015 | 82 | 2015 |
| Comparison of Vapor Formation of Water at the Solid/Water Interface to Colloidal Solutions Using Optically Excited Gold Nanostructures S Baral, A Green, MY Livshits, AO Govorov, HH Richardson ACS Nano 8 (2), pp 1439-1448, 2014 | 71 | 2014 |
| Implementation of High Power Density X-Band AlGaN/GaN High Electron Mobility Transistors (HEMTs) in a Millimeter-Wave Monolithic Microwave Integrated Circuit (MMIC) Process R Fitch, D Walker, A Green, S Tetlak, J Gillespie, R Gilbert, K Sutherlin, ... IEEE, 2015 | 70* | 2015 |
| RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ... IEEE Electron Device Letters 41 (8), 1181-1184, 2020 | 55 | 2020 |
| Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics Express 12 (12), 126501, 2019 | 47 | 2019 |
| Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, K Mahalingam, JL Brown, ... APL Materials 6 (10), 2018 | 47 | 2018 |
| Sub-micron gallium oxide radio frequency field-effect transistors KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ... 2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018 | 43 | 2018 |
| Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ... Applied Physics Letters 119 (6), 2021 | 42 | 2021 |
| Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ... IEEE Electron Device Letters 41 (7), 989-992, 2020 | 41 | 2020 |
Kelson ChabakAir Force Research Laboratory在 us.af.mil 的电子邮件经过验证
