| Comparison of solid-state thermionic refrigeration with thermoelectric refrigeration MD Ulrich, PA Barnes, CB Vining Journal of Applied Physics 90 (3), 1625-1631, 2001 | 96 | 2001 |
| Intrinsic electronically active defects in transition metal elemental oxides G Lucovsky, H Seo, S Lee, LB Fleming, MD Ulrich, J Lüning, P Lysaght, ... Japanese journal of applied physics 46 (4S), 1899, 2007 | 75 | 2007 |
| Influence of substrate temperature on epitaxial copper phthalocyanines studied by photoemission spectroscopy TS Ellis, KT Park, SL Hulbert, MD Ulrich, JE Rowe Journal of applied physics 95 (3), 982-988, 2004 | 73 | 2004 |
| Local bonding analysis of the valence and conduction band features of TiO2 L Fleming, CC Fulton, G Lucovsky, JE Rowe, MD Ulrich, J Lüning Journal of Applied Physics 102 (3), 2007 | 70 | 2007 |
| Interaction of metallophthalocyanines (MPc, M= Co, Ni) on Au (001): Ultraviolet photoemission spectroscopy and low energy electron diffraction study TS Ellis, KT Park, MD Ulrich, SL Hulbert, JE Rowe Journal of applied physics 100 (9), 2006 | 52 | 2006 |
| Soft x-ray photoelectron spectroscopy of high-k gate-dielectric structures MD Ulrich, JG Hong, JE Rowe, G Lucovsky, ASY Chan, TE Madey Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 41 | 2003 |
| Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO and Non-Crystalline Hf Silicates G Lucovsky, DM Fleetwood, S Lee, H Seo, RD Schrimpf, JA Felix, J Lning, ... IEEE transactions on nuclear science 53 (6), 3644-3648, 2006 | 40 | 2006 |
| Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications MD Ulrich, JE Rowe, D Niu, GN Parsons Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 32 | 2003 |
| Surface atom core-level shifts of clean and oxygen-covered ASY Chan, GK Wertheim, H Wang, MD Ulrich, JE Rowe, TE Madey Physical Review B—Condensed Matter and Materials Physics 72 (3), 035442, 2005 | 26 | 2005 |
| Solutions to the Fermi-Dirac integrals in semiconductor physics using Polylogarithms MD Ulrich, WF Seng, PA Barnes Journal of Computational Electronics 1, 431-434, 2002 | 24 | 2002 |
| Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si (100) substrates L Fleming, MD Ulrich, K Efimenko, J Genzer, ASY Chan, TE Madey, SJ Oh, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 18 | 2004 |
| Magnetoelectric oxide films for spin manipulation in graphene SC Stuart, B Gray, D Nevola, L Su, E Sachet, M Ulrich, DB Dougherty physica status solidi (RRL)–Rapid Research Letters 10 (3), 242-247, 2016 | 15 | 2016 |
| Defect states in HfO2 on deposited on Ge (1 1 1) and Ge (1 0 0) substrates G Lucovsky, H Seo, JP Long, KB Chung, R Vasic, M Ulrich Applied surface science 255 (13-14), 6443-6450, 2009 | 14 | 2009 |
| Interface electronic structure of alloys for Si-field-effect transistor gate dielectric applications MD Ulrich, RS Johnson, JG Hong, JE Rowe, G Lucovsky, JS Quinton, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 14 | 2002 |
| Effect of contact resistance in solid-state thermionic refrigeration MD Ulrich, PA Barnes, CB Vining Journal of applied physics 92 (1), 245-247, 2002 | 11 | 2002 |
| Intrinsic bonding defects in transition metal elemental oxides G Lucovsky, H Seo, LB Fleming, MD Ulrich, J Lüning, P Lysaght, ... Microelectronics Reliability 46 (9-11), 1623-1628, 2006 | 10 | 2006 |
| Comparison of ultrathin SiO2∕ Si (100) and SiO2∕ Si (111) interfaces from soft x-ray photoelectron spectroscopy MD Ulrich, JE Rowe, JW Keister, H Niimi, L Fleming, G Lucovsky Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 10 | 2006 |
| Smooth MgO films grown on graphite and graphene by pulsed laser deposition SC Stuart, E Satchet, A Sandin, JP Maria, JEJ Rowe, DB Dougherty, ... Journal of Vacuum Science & Technology B 31 (5), 2013 | 9 | 2013 |
| Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics G Lucovsky, JP Long, KB Chung, H Seo, B Watts, R Vasic, MD Ulrich Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 8 | 2009 |
| Graphene-based Nanoelectronics OM Nayfeh, ML Chin, M Ervin, J Wilson, T Ivanov, R Proie, BM Nichols, ... Army Research Laboratory, ARL-TR-5451 46, 2011 | 7 | 2011 |
