| Growth of semi‐polar (11‐22) GaN on a (113) Si substrate by selective MOVPE T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki physica status solidi c 5 (9), 2966-2968, 2008 | 100 | 2008 |
| Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence T Tanikawa, K Ohnishi, M Kanoh, T Mukai, T Matsuoka Applied Physics Express 11 (3), 031004, 2018 | 90 | 2018 |
| Red to blue wavelength emission of N-polar InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy K Shojiki, T Tanikawa, JH Choi, S Kuboya, T Hanada, R Katayama, ... Applied Physics Express 8 (6), 061005, 2015 | 63 | 2015 |
| Growth of non-polar (1 1 2¯ 0) GaN on a patterned (1 1 0) Si substrate by selective MOVPE T Tanikawa, D Rudolph, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki Journal of Crystal Growth 310 (23), 4999-5002, 2008 | 57 | 2008 |
| Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates CH Chiu, DW Lin, CC Lin, ZY Li, WT Chang, HW Hsu, HC Kuo, TC Lu, ... Applied physics express 4 (1), 012105, 2010 | 50 | 2010 |
| Fabrication and properties of semi‐polar (1‐101) and (11‐22) InGaN/GaN light emitting diodes on patterned Si substrates T Hikosaka, T Tanikawa, Y Honda, M Yamaguchi, N Sawaki physica status solidi c 5 (6), 2234-2237, 2008 | 39 | 2008 |
| Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯ 01) semipolar GaN ZH Wu, T Tanikawa, T Murase, YY Fang, CQ Chen, Y Honda, ... Applied Physics Letters 98 (5), 2011 | 37 | 2011 |
| Optically pumped lasing properties of InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates M Kushimoto, T Tanikawa, Y Honda, H Amano Applied Physics Express 8 (2), 022702, 2015 | 35 | 2015 |
| Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces T Iwabuchi, S Kuboya, T Tanikawa, T Hanada, R Katayama, T Fukuda, ... physica status solidi (a) 214 (9), 1600754, 2017 | 32 | 2017 |
| Control of impurity concentration in N‐polar () GaN grown by metalorganic vapor phase epitaxy T Tanikawa, S Kuboya, T Matsuoka physica status solidi (b) 254 (8), 1600751, 2017 | 31 | 2017 |
| Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth T Aisaka, T Tanikawa, T Kimura, K Shojiki, T Hanada, R Katayama, ... Japanese Journal of Applied Physics 53 (8), 085501, 2014 | 31 | 2014 |
| Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN K Ohnishi, S Kuboya, T Tanikawa, T Iwabuchi, K Yamamura, N Hasuike, ... Japanese Journal of Applied Physics 58 (SC), SC1023, 2019 | 27 | 2019 |
| Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers K Ohnishi, M Kanoh, T Tanikawa, S Kuboya, T Mukai, T Matsuoka Applied Physics Express 10 (10), 101001, 2017 | 27 | 2017 |
| Growth of GaN on Si (111) substrates via a reactive-sputter-deposited AlN intermediate layer T Yamada, T Tanikawa, Y Honda, M Yamaguchi, H Amano Japanese Journal of Applied Physics 52 (8S), 08JB16, 2013 | 24 | 2013 |
| HVPE growth of semi-polar (1 1 2¯ 2) GaN on GaN template (1 1 3) Si substrate N Suzuki, T Uchida, T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, ... Journal of crystal growth 311 (10), 2875-2878, 2009 | 24 | 2009 |
| N-polar GaN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching K Prasertsuk, T Tanikawa, T Kimura, S Kuboya, T Suemitsu, T Matsuoka Applied Physics Express 11 (1), 015503, 2017 | 23 | 2017 |
| Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar GaN/sapphire T Tanikawa, K Shojiki, T Aisaka, T Kimura, S Kuboya, T Hanada, ... Japanese Journal of Applied Physics 53 (5S1), 05FL05, 2014 | 22 | 2014 |
| Optical Study of Sub-10 nm In0.3Ga0.7N Quantum Nanodisks in GaN Nanopillars A Higo, T Kiba, S Chen, Y Chen, T Tanikawa, C Thomas, CY Lee, YC Lai, ... ACS Photonics 4 (7), 1851-1857, 2017 | 19 | 2017 |
| Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy M Yang, HS Ahn, T Tanikawa, Y Honda, M Yamaguchi, N Sawaki Journal of crystal growth 311 (10), 2914-2918, 2009 | 18 | 2009 |
| Optical properties of (1 1 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates CH Chiu, DW Lin, CC Lin, ZY Li, YC Chen, SC Ling, HC Kuo, TC Lu, ... Journal of crystal growth 318 (1), 500-504, 2011 | 17 | 2011 |
