受强制性开放获取政策约束的文章 - Jean-Baptiste Rodriguez了解详情
无法在其他位置公开访问的文章：12 篇
Metamorphic III–V semiconductor lasers grown on silicon
E Tournié, L Cerutti, JB Rodriguez, H Liu, J Wu, S Chen
Mrs Bulletin 41 (3), 218-223, 2016
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate
Q Durlin, JP Perez, L Cerutti, JB Rodriguez, T Cerba, T Baron, E Tournié, ...
Infrared physics & technology 96, 39-43, 2019
强制性开放获取政策： Agence Nationale de la Recherche
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
R Kudrawiec, J Kopaczek, O Delorme, MP Polak, M Gladysiewicz, E Luna, ...
Journal of Applied Physics 125 (20), 2019
强制性开放获取政策： Agence Nationale de la Recherche
Molecular-beam epitaxy of GaInSbBi alloys
O Delorme, L Cerutti, E Luna, A Trampert, E Tournié, JB Rodriguez
Journal of Applied Physics 126 (15), 2019
强制性开放获取政策： Agence Nationale de la Recherche, Federal Ministry of Education and Research …
Magneto-spectroscopy investigation of InAs/InAsSb superlattices for midwave infrared detection
G Krizman, F Carosella, J Bermejo-Ortiz, A Philippe, JB Rodriguez, ...
Journal of Applied Physics 130 (5), 2021
强制性开放获取政策： Agence Nationale de la Recherche
InAs/InAsSb type 2 superlattices band parameters determination via magnetoabsorption and kp modeling
G Krizman, F Carosella, A Philippe, R Ferreira, JB Rodriguez, JP Perez, ...
Physics and Simulation of Optoelectronic Devices XXVIII 11274, 13-20, 2020
强制性开放获取政策： Agence Nationale de la Recherche
Optical properties and dynamics of excitons in Ga (Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior
E Rogowicz, WM Linhart, M Syperek, J Kopaczek, O Delorme, L Cerutti, ...
Semiconductor Science and Technology 35 (2), 025024, 2020
强制性开放获取政策： Agence Nationale de la Recherche
Investigation of Intensity Noise in an Interband Cascade Laser Epitaxially Grown on Silicon and Designed for High-speed Applications
H Kim, P Didier, S Zaminga, H Huang, DA Díaz-Thomas, AN Baranov, ...
CLEO: Science and Innovations, STu4C. 6, 2024
强制性开放获取政策： Agence Nationale de la Recherche
Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature
J Guise, H Ratovo, M Thual, P Fehlen, F Gonzalez-Posada Flores, ...
Journal of Applied Physics 134 (16), 2023
强制性开放获取政策： Agence Nationale de la Recherche
A numerical and experimental butt-coupling analysis of GaSb diode laser grown on Silicon photonic integrated circuit
M Paparella, A Remis, LM Bartolome, JB Rodriguez, L Cerutti, M Grande, ...
The European Conference on Lasers and Electro-Optics, cb_4_2, 2023
强制性开放获取政策： Agence Nationale de la Recherche
Monolithic integration of GaSb diode lasers on a silicon photonic circuit
A Remis, M Paparella, LM Bartolomé, A Gilbert, G Boissier, M Grande, ...
The European Conference on Lasers and Electro-Optics, cb_4_1, 2023
强制性开放获取政策： Agence Nationale de la Recherche
Waveguide-integrated optically-controlled THz modulator
J Guise, H Ratovo, S Blin, L Cerutti, JB Rodriguez, E Centeno, M Thual, ...
2022 47th International Conference on Infrared, Millimeter and Terahertz …, 2022
强制性开放获取政策： Agence Nationale de la Recherche
可在其他位置公开访问的文章：52 篇
Silicon-based photonic integration beyond the telecommunication wavelength range
G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014
强制性开放获取政策： Research Foundation (Flanders), European Commission
Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm
E Ryckeboer, A Gassenq, M Muneeb, N Hattasan, S Pathak, L Cerutti, ...
Optics express 21 (5), 6101-6108, 2013
强制性开放获取政策： Research Foundation (Flanders)
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
Optical Materials Express 3 (9), 1523-1536, 2013
强制性开放获取政策： Research Foundation (Flanders)
III-V-on-silicon integrated micro-spectrometer for the 3 μm wavelength range
M Muneeb, A Vasiliev, A Ruocco, A Malik, H Chen, M Nedeljkovic, ...
Optics express 24 (9), 9465-9472, 2016
强制性开放获取政策： Netherlands Organisation for Scientific Research, European Commission
Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon
M Rio Calvo, L Monge Bartolomé, M Bahriz, G Boissier, L Cerutti, ...
Optica 7 (4), 263-266, 2020
强制性开放获取政策： European Commission, Agence Nationale de la Recherche
Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
E Tournié, L Monge Bartolome, M Rio Calvo, Z Loghmari, ...
Light: Science & Applications 11 (1), 165, 2022
强制性开放获取政策： European Commission, Agence Nationale de la Recherche
Heterogeneous integration of GaInAsSb pin photodiodes on a silicon-on-insulator waveguide circuit
N Hattasan, A Gassenq, L Cerutti, JB Rodriguez, E Tournié, G Roelkens
IEEE Photonics Technology Letters 23 (23), 1760-1762, 2011
强制性开放获取政策： Research Foundation (Flanders)
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut
C Cornet, S Charbonnier, I Lucci, L Chen, A Létoublon, A Alvarez, ...
Physical Review Materials 4 (5), 053401, 2020
强制性开放获取政策： Agence Nationale de la Recherche
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