受强制性开放获取政策约束的文章 - Keke He了解详情
无法在其他位置公开访问的文章：1 篇
Emergent Spintronic Devices Integrating 2D Semiconductors with Functional Magnetic Materials
K He, PA Dowben, JP Bird
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 525-526, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
可在其他位置公开访问的文章：14 篇
Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors
M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ...
ACS nano 13 (1), 803-811, 2018
强制性开放获取政策： US National Science Foundation, US Department of Energy
Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates
CP Kwan, M Street, A Mahmood, W Echtenkamp, M Randle, K He, ...
AIP Advances 9 (5), 2019
强制性开放获取政策： US National Science Foundation
Covalent 2D Cr2Te3 ferromagnet
M Bian, AN Kamenskii, M Han, W Li, S Wei, X Tian, DB Eason, F Sun, ...
Materials Research Letters 9 (5), 205-212, 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy, 国家自然科学基金委员会
Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer
J Nathawat, KKH Smithe, CD English, S Yin, R Dixit, M Randle, ...
Physical review materials 4 (1), 014002, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Tuning Fano resonances with a nano-chamber of air
J Chen, K He, C Sun, Y Wang, H Li, Q Gong
Optics letters 41 (10), 2145-2148, 2016
强制性开放获取政策： 国家自然科学基金委员会
Asymmetrically engineered nanoscale transistors for on-demand sourcing of terahertz plasmons
B Barut, X Cantos-Roman, J Crabb, CP Kwan, R Dixit, N Arabchigavkani, ...
Nano Letters 22 (7), 2674-2681, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics
K He, B Barut, S Yin, MD Randle, R Dixit, N Arabchigavkani, J Nathawat, ...
Advanced Materials 34 (12), 2105023, 2022
强制性开放获取政策： US National Science Foundation
Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
S Yin, JG Gluschke, AP Micolich, J Nathawat, B Barut, R Dixit, ...
ACS Applied Electronic Materials 1 (11), 2260-2267, 2019
强制性开放获取政策： US Department of Energy, Australian Research Council
Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–9–10+5 s) in the Ionic Liquid DEME-TFSI
S Yin, K He, MD Randle, B Barut, R Dixit, A Lipatov, A Sinitskii, JP Bird
The Journal of Physical Chemistry C 126 (4), 1958-1965, 2022
强制性开放获取政策： US Department of Energy
Pulsed studies of intervalley transfer in : A paradigm for valley photovoltaics
R Dixit, B Barut, S Yin, J Nathawat, M Randle, N Arabchigavkani, K He, ...
Physical Review Materials 4 (8), 085404, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy
Building the quasi one dimensional transistor from 2D materials
PV Galiy, M Randle, A Lipatov, L Wang, S Gilbert, N Vorobeva, A Kumar, ...
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019
强制性开放获取政策： US National Science Foundation
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene
J Nathawat, I Mansaray, K Sakanashi, N Wada, MD Randle, S Yin, K He, ...
Nature Communications 14 (1), 1507, 2023
强制性开放获取政策： US Department of Energy, US Department of Defense
Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene
N Arabchigavkani, R Somphonsane, H Ramamoorthy, G He, J Nathawat, ...
Physical Review Letters 126 (8), 086802, 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy, Swedish Research …
Nanoscale Transistors for On-Chip Sourcing of Terahertz Plasmons
B Barut, X Cantos-Roman, CP Kwan, R Dixit, N Arabchigavkani, S Yin, ...
JSAP Annual Meetings Extended Abstracts The 82nd JSAP Autumn Meeting 2021 …, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
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