| Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In 2 Se 3 thin layers S Wan, Y Li, W Li, X Mao, W Zhu, H Zeng Nanoscale 10 (31), 14885-14892, 2018 | 228 | 2018 |
| Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3 S Wan, Y Li, W Li, X Mao, C Wang, C Chen, J Dong, A Nie, J Xiang, Z Liu, ... Advanced Functional Materials 29 (20), 1808606, 2019 | 220 | 2019 |
| Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 Y Li, J Fu, X Mao, C Chen, H Liu, M Gong, H Zeng Nature communications 12 (1), 5896, 2021 | 203 | 2021 |
| Room-Temperature Ferroelectricity in - Multilayers Y Wan, T Hu, X Mao, J Fu, K Yuan, Y Song, X Gan, X Xu, M Xue, X Cheng, ... Physical Review Letters 128 (6), 067601, 2022 | 120 | 2022 |
| Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In2Se3 Y Li, C Chen, W Li, X Mao, H Liu, J Xiang, A Nie, Z Liu, W Zhu, H Zeng Advanced Electronic Materials 6 (7), 2000061, 2020 | 76 | 2020 |
| Large-Scale Domain Engineering in Two-Dimensional Ferroelectric CuInP2S6 via Giant Flexoelectric Effect C Chen, H Liu, Q Lai, X Mao, J Fu, Z Fu, H Zeng Nano Letters 22 (8), 3275-3282, 2022 | 67 | 2022 |
| Effect of layer and stacking sequence in simultaneously grown 2H and 3R WS2 atomic layers R Yang, S Feng, X Lei, X Mao, A Nie, B Wang, K Luo, J Xiang, F Wen, ... Nanotechnology 30 (34), 345203, 2019 | 21 | 2019 |
| Bright and Near-Unity Polarized Light Emission Enabled by Highly Luminescent Cu2I2-Dimer Cluster-Based Hybrid Materials JJ Wang, X Mao, JN Yang, YC Yin, JS Yao, LZ Feng, F Zhu, C Ma, C Yang, ... Nano Letters 21 (9), 4115-4121, 2021 | 16 | 2021 |
| Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe2 with Two-Dimensional Ferroelectric CuInP2S6 X Mao, J Fu, C Chen, Y Li, H Liu, M Gong, H Zeng ACS Applied Materials & Interfaces 13 (20), 24250-24257, 2021 | 15 | 2021 |
| Magnetic phase transition in two-dimensional CrBr3 probed by a quantum sensor H Wang, P Lei, X Mao, X Kong, X Ye, P Wang, Y Wang, X Qin, J Meijer, ... Chinese Physics Letters 39 (4), 047601, 2022 | 11 | 2022 |
| Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3 (Adv. Funct. Mater. 20/2019) S Wan, Y Li, W Li, X Mao, C Wang, C Chen, J Dong, A Nie, J Xiang, Z Liu, ... Advanced Functional Materials 29 (20), 1970136, 2019 | 5 | 2019 |
| Thermal-activated escape of the bistable magnetic states in 2D Fe3GeTe2 near the critical point C Wang, X Kong, X Mao, C Chen, P Yu, Y Wang, F Shi, J Du, M Gong, ... Communications Physics 6 (1), 351, 2023 | 2 | 2023 |
| Magnetic proximity effect in ultrathin freestanding WS2/LaMnO3 van der Waals heterostructures Q Lu, X Lei, J Fu, Q Wang, X Mao, L Cheng, X Zhai, H Zeng AIP Advances 13 (5), 2023 | | 2023 |
| Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe₂ with Two-Dimensional Ferroelectric CuInP₂S₆ X Mao, J Fu, C Chen, Y Li, H Liu, M Gong, H Zeng | | 2021 |
| Ferroelectric gating of the PL in MoSe2 X Mao, J Fu, M Gong, H Zeng arXiv preprint arXiv:2011.04985, 2020 | | 2020 |
| Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3 Y Li, C Chen, W Li, X Mao, H Liu, J Xiang, A Nie, Z Liu, W Zhu, H Zeng arXiv preprint arXiv:2005.04926, 2020 | | 2020 |
| A switchable diode based on room-temperature two-dimensional ferroelectric {\alpha}-In2Se3 thin layers S Wan, Y Li, W Li, X Mao, W Zhu, H Zeng arXiv preprint arXiv:1803.04664, 2018 | | 2018 |
