受强制性开放获取政策约束的文章 - Karthigai Pandian M了解详情
无法在其他位置公开访问的文章：1 篇
A novel 2‑D analytical model for the electrical characteristics of a gate‑all‑around heterojunction tunnel field‑effect transistor including depletion regions
C Usha, P Vimala, TSA Samuel, MK Pandian
Journal of Computational Electronics, 2020
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：1 篇
Prediction of Process Parameters of Ultrasonically Welded PC/ABS Material Using Soft-Computing Techniques
T Chinnadurai, N Prabaharan, S Saravanan, MK Pandian, P Pandiyan, ...
IEEE Access 9, 33849-33859, 2021
强制性开放获取政策： Department of Science & Technology, India
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