受强制性开放获取政策约束的文章 - Sahil Garg了解详情
无法在其他位置公开访问的文章：3 篇
Simulation of Mos2 based Asymmetric Nano-Channel Rectifier
S Garg, B Sharma, GM Khanal, N Gupta, AK Singh, R Syal, S Kumar, ...
2022 IEEE 22nd International Conference on Nanotechnology (NANO), 178-181, 2022
强制性开放获取政策： Department of Science & Technology, India
MoS2 self-switching diode-based low power single and three-phase bridge rectifiers
S Garg, B Sharma, GM Khanal, S Kumar, N Gupta, SR Kasjoo, A Song, ...
IEEE Transactions on Nanotechnology, 2023
强制性开放获取政策： Department of Science & Technology, India
InGaAs Self-Switching Diode With Suppressed Harmonics For High Frequency Applications
B Sharma, S Garg, P Singh, S Garg, G Das, DK Sharma, N Gupta, ...
2023 International Conference on Microelectronics (ICM), 145-148, 2023
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：3 篇
Electrical equivalent modeling of MEMS differential capacitive accelerometer
R Mukhiya, M Garg, P Gaikwad, S Sinha, AK Singh, R Gopal
Microelectronics Journal 99, 104770, 2020
强制性开放获取政策： Council of Scientific and Industrial Research, India
Extraction of trench capacitance and reverse recovery time of InGaAs self-switching diode
S Garg, B Kaushal, S Kumar, SR Kasjoo, S Mahapatra, AK Singh
IEEE Transactions on Nanotechnology 18, 925-931, 2019
强制性开放获取政策： Department of Science & Technology, India
InGaAs self-switching diode-based THz bridge rectifier
S Garg, B Kaushal, SR Kasjoo, S Kumar, N Gupta, A Song, AK Singh
Semiconductor Science and Technology 36 (7), 075017, 2021
强制性开放获取政策： Department of Science & Technology, India
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