| Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures N Carlsson, W Seifert, A Petersson, P Castrillo, ME Pistol, L Samuelson Applied physics letters 65 (24), 3093-3095, 1994 | 236 | 1994 |
| Carbon in silicon: Modeling of diffusion and clustering mechanisms R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ... Journal of Applied Physics 92 (3), 1582-1587, 2002 | 215 | 2002 |
| Excited states of individual quantum dots studied by photoluminescence spectroscopy D Hessman, P Castrillo, ME Pistol, C Pryor, L Samuelson Applied physics letters 69 (6), 749-751, 1996 | 157 | 1996 |
| Random telegraph noise in photoluminescence from individual self-assembled quantum dots ME Pistol, P Castrillo, D Hessman, JA Prieto, L Samuelson Physical Review B 59 (16), 10725, 1999 | 140 | 1999 |
| Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial LA Marqués, L Pelaz, P Castrillo, J Barbolla Physical Review B—Condensed Matter and Materials Physics 71 (8), 085204, 2005 | 101 | 2005 |
| Band filling at low optical power density in semiconductor dots P Castrillo, D Hessman, ME Pistol, S Anand, N Carlsson, W Seifert, ... Applied physics letters 67 (13), 1905-1907, 1995 | 70 | 1995 |
| Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla Applied Physics Letters 86 (25), 2005 | 43 | 2005 |
| Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla Physical Review B—Condensed Matter and Materials Physics 72 (3), 035202, 2005 | 40 | 2005 |
| Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation P Castrillo, R Pinacho, M Jaraiz, JE Rubio Journal of Applied Physics 109 (10), 2011 | 38 | 2011 |
| Comprehensive model of damage accumulation in silicon KRC Mok, F Benistant, M Jaraiz, JE Rubio, P Castrillo, R Pinacho, ... Journal of Applied Physics 103 (1), 2008 | 35 | 2008 |
| Photoluminescence polarization of single InP quantum dots V Zwiller, L Jarlskog, ME Pistol, C Pryor, P Castrillo, W Seifert, ... Physical Review B 63 (23), 233301, 2001 | 30 | 2001 |
| Nano-optical studies of individual nanostructures LSL Samuelson, NCN Carlsson, PCP Castrillo, AGA Gustafsson, ... Japanese journal of applied physics 34 (8S), 4392, 1995 | 30* | 1995 |
| Lattice dynamics and Raman response of (113) GaAs/AlAs superlattices P Castrillo, L Colombo, G Armelles Physical Review B 49 (15), 10362, 1994 | 30 | 1994 |
| Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo I Martin-Bragado, S Tian, M Johnson, P Castrillo, R Pinacho, J Rubio, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006 | 29 | 2006 |
| Optical studies of GaAs quantum wells strained to GaP JA Prieto, G Armelles, ME Pistol, P Castrillo, JP Silveira, F Briones Applied physics letters 70 (25), 3449-3451, 1997 | 29 | 1997 |
| Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, J Barbolla, ... Physical Review B 68 (19), 195204, 2003 | 28 | 2003 |
| Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population KRC Mok, M Jaraiz, I Martin-Bragado, JE Rubio, P Castrillo, R Pinacho, ... Journal of applied physics 98 (4), 2005 | 27 | 2005 |
| Optical anisotropy of (113)-oriented GaAs/AlAs superlattices G Armelles, P Castrillo, PS Dominguez, L Gonzalez, A Ruiz, ... Physical Review B 49 (19), 14020, 1994 | 27 | 1994 |
| Electronic structure of strained-layer AlAs/InAs (001) superlattices J Arriaga, G Armelles, MC Muoz, JM Rodrguez, P Castrillo, M Recio, ... Physical Review B 43 (3), 2050, 1991 | 24 | 1991 |
| From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon I Martin-Bragado, I Avci, N Zographos, M Jaraiz, P Castrillo Solid-state electronics 52 (9), 1430-1436, 2008 | 23 | 2008 |
Martin JaraizProfessor, Universidad de Valladolid在 ele.uva.es 的电子邮件经过验证
