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Shashank Patwal
Shashank Patwal
PhD Student, School of Electrical and Electronic Engineering, Nanyang Technological University
在 e.ntu.edu.sg 的电子邮件经过验证
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引用次数
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年份
Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering
S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu
physica status solidi (a) 217 (7), 1900818, 2020
152020
A study on GaSi interdiffusion during (Al) GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
Y Zheng, M Agrawal, N Dharmarasu, K Radhakrishnan, S Patwal
Applied Surface Science 481, 319-326, 2019
122019
Stress optimization of AlN buffer in AlN/GaN/AlN Quantum well for DH-HEMT on SiC by PA-MBE
S Patwal, M Agrawal, N Dharmarasu, K Radhakrishnan
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 428-430, 2019
12019
2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
S Patwal
Nanyang Technological University, 2021
2021
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