受强制性开放获取政策约束的文章 - He Zhang了解详情
无法在其他位置公开访问的文章：19 篇
Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory
H Zhang, W Kang, L Wang, KL Wang, W Zhao
IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017
强制性开放获取政策： 国家自然科学基金委员会
Spintronic processing unit in spin transfer torque magnetic random access memory
H Zhang, W Kang, K Cao, B Wu, Y Zhang, W Zhao
IEEE Transactions on Electron Devices 66 (4), 2017-2022, 2019
强制性开放获取政策： 国家自然科学基金委员会
Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque
SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao
2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019
强制性开放获取政策： 国家自然科学基金委员会
Spintronic processing unit within voltage-gated spin Hall effect MRAMs
H Zhang, W Kang, B Wu, P Ouyang, E Deng, Y Zhang, W Zhao
IEEE Transactions on Nanotechnology 18, 473-483, 2019
强制性开放获取政策： 国家自然科学基金委员会
Spintronic computing-in-memory architecture based on voltage-controlled spin–orbit torque devices for binary neural networks
H Wang, W Kang, B Pan, H Zhang, E Deng, W Zhao
IEEE Transactions on Electron Devices 68 (10), 4944-4950, 2021
强制性开放获取政策： 国家自然科学基金委员会
HD-CIM: Hybrid-device computing-in-memory structure based on MRAM and SRAM to reduce weight loading energy of neural networks
H Zhang, J Liu, J Bai, S Li, L Luo, S Wei, J Wu, W Kang
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (11), 4465-4474, 2022
强制性开放获取政策： 国家自然科学基金委员会
Spintronic memories: From memory to computing-in-memory
W Kang, H Zhang, W Zhao
2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 1-2, 2019
强制性开放获取政策： 国家自然科学基金委员会
A spintronic in-memory computing network for efficient hamming codec implementation
L Jiang, E Deng, H Zhang, Z Wang, W Kang, W Zhao
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (4), 2086-2090, 2022
强制性开放获取政策： 国家自然科学基金委员会
CP-SRAM: charge-pulsation SRAM marco for ultra-high energy-efficiency computing-in-memory
H Zhang, L Jiang, J Wu, T Chen, J Liu, W Kang, W Zhao
Proceedings of the 59th ACM/IEEE Design Automation Conference, 109-114, 2022
强制性开放获取政策： 国家自然科学基金委员会
High-density and fast-configuration non-volatile look-up table based on NAND-like spintronic memory
H Zhang, W Kang, Z Wang, E Deng, Y Zhang, W Zhao
2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 382-385, 2018
强制性开放获取政策： 国家自然科学基金委员会
A reconfigurable spatial architecture for energy-efficient inception neural networks
L Luo, W Kang, J Liu, H Zhang, Y Zhang, D Liu, P Ouyang
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 13 (1 …, 2023
强制性开放获取政策： 国家自然科学基金委员会
SpinCIM: Spin orbit torque memory for ternary neural networks based on the computing-in-memory architecture
L Luo, D Liu, H Zhang, Y Zhang, J Bai, W Kang
CCF Transactions on High Performance Computing 4 (4), 421-434, 2022
强制性开放获取政策： 国家自然科学基金委员会
A mini tutorial of processing in memory: From principles, devices to prototypes
B Pan, G Wang, H Zhang, W Kang, W Zhao
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (7), 3044-3050, 2022
强制性开放获取政策： 国家自然科学基金委员会
Linear error correction codec implementation based on an in-memory computing architecture for nonvolatile memories
L Luo, X Liu, L Jiang, H Zhang, Y Zhang, D Liu, W Kang
IEEE Transactions on Electron Devices 69 (6), 3455-3461, 2022
强制性开放获取政策： 国家自然科学基金委员会
Programmable stateful in-memory computing paradigm via a single resistive device
W Kang, H Zhang, P Ouyang, Y Zhang, W Zhao
2017 IEEE International Conference on Computer Design (ICCD), 613-616, 2017
强制性开放获取政策： 国家自然科学基金委员会
An In-Memory-Computing STT-MRAM Macro with Analog ReLU and Pooling Layers for Ultra-High Efficient Neural Network
L Jiang, S Sun, J Ge, H Zhang, W Kang
2023 IEEE 12th Non-Volatile Memory Systems and Applications Symposium (NVMSA …, 2023
强制性开放获取政策： 国家自然科学基金委员会
Novel nonvolatile lookup table design based on voltage-controlled spin orbit torque memory
X Liu, E Deng, H Zhang, Y Zhang, B Pan, W Kang
IEEE Transactions on Electron Devices 69 (4), 1677-1682, 2022
强制性开放获取政策： 国家自然科学基金委员会
A novel cross-point MRAM with diode selector capable of high-density, high-speed, and low-power in-memory computation
C Ding, W Kang, H Zhang, Y Zhang, W Zhao
Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale …, 2018
强制性开放获取政策： 国家自然科学基金委员会
CiTST-AdderNets: Computing in Toggle Spin Torques MRAM for Energy-Efficient AdderNets
L Luo, E Deng, D Liu, Z Wang, W Huang, H Zhang, X Liu, J Bai, J Liu, ...
IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
强制性开放获取政策： 国家自然科学基金委员会
可在其他位置公开访问的文章：7 篇
Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications
C Jiang, J Li, H Zhang, S Lu, P Li, C Wang, Z Zhang, Z Hou, X Liu, J Feng, ...
Journal of Semiconductors 44 (12), 122501, 2023
强制性开放获取政策： 国家自然科学基金委员会
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