Quantum confinement in Si and Ge nanostructures: Theory and experiment EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova Applied Physics Reviews 1 (1), 2014 | 254 | 2014 |
Quantum confinement in Si and Ge nanostructures EG Barbagiovanni, DJ Lockwood, PJ Simpson, LV Goncharova Journal of Applied Physics 111 (3), 2012 | 222 | 2012 |
Electronic structure study of ion-implanted Si quantum dots in a SiO matrix: Analysis of quantum confinement theories EG Barbagiovanni, LV Goncharova, PJ Simpson Physical Review B 83 (3), 035112, 2011 | 65 | 2011 |
Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorods EG Barbagiovanni, R Reitano, G Franzò, V Strano, A Terrasi, S Mirabella Nanoscale 8 (2), 995-1006, 2016 | 59 | 2016 |
Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition EG Barbagiovanni, V Strano, G Franzò, I Crupi, S Mirabella Applied Physics Letters 106 (9), 2015 | 50 | 2015 |
Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices S Cosentino, EG Barbagiovanni, I Crupi, M Miritello, G Nicotra, C Spinella, ... Solar Energy Materials and Solar Cells 135, 22-28, 2015 | 38 | 2015 |
Protrusions reduction in 3C-SiC thin film on Si M Zimbone, M Mauceri, G Litrico, EG Barbagiovanni, C Bongiorno, ... Journal of Crystal Growth 498, 248-257, 2018 | 35 | 2018 |
Flexible organic/inorganic hybrid field-effect transistors with high performance and operational stability AS Dahiya, C Opoku, G Poulin-Vittrant, N Camara, C Daumont, ... ACS Applied Materials & Interfaces 9 (1), 573-584, 2017 | 29 | 2017 |
Quantum confinement in nonadditive space with a spatially dependent effective mass for Si and Ge quantum wells EG Barbagiovanni, RN Costa Filho Physica E: Low-dimensional Systems and Nanostructures 63, 14-20, 2014 | 26 | 2014 |
Role of quantum confinement in luminescence efficiency of group IV nanostructures EG Barbagiovanni, DJ Lockwood, NL Rowell, RN Costa Filho, I Berbezier, ... Journal of Applied Physics 115 (4), 2014 | 24 | 2014 |
The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects S Cosentino, AM Mio, EG Barbagiovanni, R Raciti, R Bahariqushchi, ... Nanoscale 7 (26), 11401-11408, 2015 | 21 | 2015 |
The role of Zn vacancies in UV sensing with ZnO nanorods EG Barbagiovanni, V Strano, G Franzò, S Mirabella Applied Physics Letters 109 (14), 2016 | 17 | 2016 |
Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC M Zimbone, EG Barbagiovanni, C Bongiorno, C Calabretta, L Calcagno, ... Crystal Growth & Design 20 (5), 3104-3111, 2020 | 16 | 2020 |
Universal model for defect-related visible luminescence in ZnO nanorods EG Barbagiovanni, V Strano, G Franzò, R Reitano, AS Dahiya, ... RSC advances 6 (77), 73170-73175, 2016 | 16 | 2016 |
Influence of interface potential on the effective mass in Ge nanostructures EG Barbagiovanni, S Cosentino, DJ Lockwood, RN Costa Filho, A Terrasi, ... Journal of Applied Physics 117 (15), 2015 | 15 | 2015 |
Use of W-boson longitudinal-transverse interferencein top quark spin-correlation functions CA Nelson, EG Barbagiovanni, JJ Berger, EK Pueschel, JR Wickman The European Physical Journal C-Particles and Fields 45 (1), 121-138, 2006 | 14 | 2006 |
Photoluminescence efficiency of germanium dots self-assembled on oxides DJ Lockwood, NL Rowell, EG Barbagiovanni, LV Goncharova, ... ECS Transactions 53 (1), 185, 2013 | 13 | 2013 |
3C-SiC grown on Si by using a Si1-xGex buffer layer M Zimbone, M Zielinski, EG Barbagiovanni, C Calabretta, F La Via Journal of Crystal Growth 519, 1-6, 2019 | 11 | 2019 |
Thermal Annealing of high dose P implantation in 4H-SiC C Calabretta, M Zimbone, EG Barbagiovanni, S Boninelli, N Piluso, ... Materials Science Forum 963, 399-402, 2019 | 8 | 2019 |
High Resolution Investigation of Stacking Fault Density by HRXRD and STEM EG Barbagiovanni, A Alberti, C Bongiorno, E Smecca, M Zimbone, ... Materials Science Forum 963, 346-349, 2019 | 5 | 2019 |