Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof M Tsutsumi, K Kajiwara, RS Makala US Patent 9,991,277, 2018 | 388 | 2018 |
Method of making a vertical NAND device using sequential etching of multilayer stacks RS Makala, YS Lee, J Pachamuthu, J Alsmeier, H Chien US Patent 8,946,023, 2015 | 325 | 2015 |
Bottom electrodes for use with metal oxide resistivity switching layers DC Sekar, F Kreupl, RS Makala US Patent 8,354,660, 2013 | 272 | 2013 |
Compact three dimensional vertical NAND and method of making thereof J Alsmeier, RS Makala, X Costa, Y Zhang US Patent 8,878,278, 2014 | 264 | 2014 |
Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device RS Makala, J Alsmeier, YS Lee US Patent 8,658,499, 2014 | 221 | 2014 |
Microwave-assisted single-step functionalization and in situ derivatization of carbon nanotubes with gold nanoparticles MS Raghuveer, S Agrawal, N Bishop, G Ramanath Chemistry of materials 18 (6), 1390-1393, 2006 | 197 | 2006 |
Methods of fabricating a three-dimensional non-volatile memory device J Pachamuthu, J Alsmeier, RS Makala, YS Lee US Patent 9,230,973, 2016 | 196 | 2016 |
Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad J Liu, Y Zhang, M Chowdhury, RS Makala, J Alsmeier US Patent 9,698,153, 2017 | 166 | 2017 |
Pulsed laser deposition of Bi2Te3-based thermoelectric thin films RS Makala, K Jagannadham, BC Sales Journal of Applied physics 94 (6), 3907-3918, 2003 | 156 | 2003 |
Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof RS Makala, J Alsmeier US Patent 9,397,093, 2016 | 146 | 2016 |
High aspect ratio memory hole channel contact formation J Pachamuthu, J Alsmeier, RS Makala, YS Lee US Patent 9,023,719, 2015 | 138 | 2015 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure RS Makala, R Sharangpani, K Sateesh, G Mizuno, N Takeguchi, ... US Patent 10,128,261, 2018 | 137 | 2018 |
High aspect ratio memory hole channel contact formation J Pachamuthu, J Alsmeier, RS Makala, YS Lee US Patent 9,460,931, 2016 | 118 | 2016 |
Nanomachining carbon nanotubes with ion beams MS Raghuveer, PG Ganesan, J D’Arcy-Gall, G Ramanath, M Marshall, ... Applied Physics Letters 84 (22), 4484-4486, 2004 | 118 | 2004 |
Method of selectively depositing floating gate material in a memory device M Gunji-Yoneoka, A Suyama, K Yamaguchi, H Kinoshita, RS Makala, ... US Patent 9,768,270, 2017 | 115 | 2017 |
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks Z Lu, K Sateesh, J Kai, RS Makala, YS Lee, J Pachamuthu, J Alsmeier, ... US Patent 9,449,982, 2016 | 109 | 2016 |
Monolithic three-dimensional NAND strings and methods of fabrication thereof Y Zhang, J Kai, RS Makala, J Liu, M Chowdhury, C Huang, J Alsmeier US Patent 9,576,975, 2017 | 100 | 2017 |
Defect-induced electrical conductivity increase in individual multiwalled carbon nanotubes S Agrawal, MS Raghuveer, H Li, G Ramanath Applied physics letters 90 (19), 2007 | 94 | 2007 |
Floating gate ultrahigh density vertical NAND flash memory RS Makala, Y Zhang, YS Lee, SK Kanakamedala, R Sharangpani, ... US Patent 9,159,739, 2015 | 93 | 2015 |
Surfactant‐Directed Synthesis of Branched Bismuth Telluride/Sulfide Core/Shell Nanorods A Purkayastha, Q Yan, MS Raghuveer, DD Gandhi, H Li, ZW Liu, ... Advanced Materials 20 (14), 2679-2683, 2008 | 91 | 2008 |