受强制性开放获取政策约束的文章 - Wilman Tsai了解详情
无法在其他位置公开访问的文章：7 篇
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs
R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016
强制性开放获取政策： US National Science Foundation, Federal Ministry of Education and Research …
Energy efficient computing with high-density, field-free STT-assisted SOT-MRAM (SAS-MRAM)
W Hwang, F Xue, F Zhang, MY Song, CM Lee, E Turgut, TC Chen, X Bao, ...
IEEE Transactions on Magnetics 59 (3), 1-6, 2022
强制性开放获取政策： US National Science Foundation
Nanocrystallite seeding of metastable ferroelectric phase formation in atomic layer-deposited Hafnia–Zirconia alloys
Z Yu, B Saini, Y Liu, F Huang, A Mehta, JD Baniecki, HSP Wong, W Tsai, ...
ACS Applied Materials & Interfaces 14 (47), 53057-53064, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy
Tunable spin–orbit torque efficiency in in-plane and perpendicular magnetized [Pt/Co] n multilayer
F Xue, SJ Lin, M DC, C Bi, X Li, W Tsai, SX Wang
Applied Physics Letters 118 (4), 2021
强制性开放获取政策： US National Science Foundation
Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) Accelerators
Y Luo, P Kumar, YC Liao, W Hwang, F Xue, W Tsai, SX Wang, A Naeemi, ...
2022 IEEE International Memory Workshop (IMW), 1-4, 2022
强制性开放获取政策： US Department of Defense
On-Device Continual Learning With STT-Assisted-SOT MRAM Based In-Memory Computing
F Zhang, A Sridharan, W Hwang, F Xue, W Tsai, SX Wang, D Fan
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2024
强制性开放获取政策： US National Science Foundation, Swiss National Science Foundation
CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications
Z Yu, B Saini, PJ Liao, YK Chang, V Hou, CH Nien, YC Shih, SH Yeong, ...
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy, Swiss National …
可在其他位置公开访问的文章：15 篇
Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
M Dc, DF Shao, VDH Hou, A Vailionis, P Quarterman, A Habiboglu, ...
Nature Materials 22 (5), 591-598, 2023
强制性开放获取政策： US National Science Foundation, US Department of Defense, Japan Science and …
Accelerating deep neural networks in processing-in-memory platforms: Analog or digital approach?
S Angizi, Z He, D Reis, XS Hu, W Tsai, SJ Lin, D Fan
2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 197-202, 2019
强制性开放获取政策： US National Science Foundation
Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors
C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017
强制性开放获取政策： US National Science Foundation, European Commission, Federal Ministry of …
Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder
X Li, P Li, VDH Hou, DC Mahendra, CH Nien, F Xue, D Yi, C Bi, CM Lee, ...
Matter 4 (5), 1639-1653, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Few-layer black phosporous PMOSFETs with BN/AI2O3bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm
LM Yang, G Qiu, MW Si, AR Charnas, CA Milligan, DY Zemlyanov, ...
2016 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2016
强制性开放获取政策： US National Science Foundation
Materials requirements of high-speed and low-power spin-orbit-torque magnetic random-access memory
X Li, SJ Lin, M Dc, YC Liao, C Yao, A Naeemi, W Tsai, SX Wang
IEEE Journal of the Electron Devices Society 8, 674-680, 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
How important is the metal–semiconductor contact for Schottky barrier transistors: a case study on few-layer black phosphorus?
L Yang, A Charnas, G Qiu, YM Lin, CC Lu, W Tsai, Q Paduano, M Snure, ...
ACS omega 2 (8), 4173-4179, 2017
强制性开放获取政策： US National Science Foundation, US Department of Defense
High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with …
Z Lin, M Si, YC Luo, X Lyu, A Charnas, Z Chen, Z Yu, W Tsai, PC McIntyre, ...
2021 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2021
强制性开放获取政策： US Department of Defense
Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N
F Xue, SJ Lin, M Song, W Hwang, C Klewe, CM Lee, E Turgut, P Shafer, ...
Nature communications 14 (1), 3932, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors
B Saini, F Huang, YY Choi, Z Yu, V Thampy, JD Baniecki, W Tsai, ...
Advanced Electronic Materials 9 (6), 2300016, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ...
Advanced Electronic Materials 8 (7), 2101258, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy
Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
F Huang, B Saini, Z Yu, C Yoo, V Thampy, X He, JD Baniecki, W Tsai, ...
ACS Applied Materials & Interfaces 15 (43), 50246-50253, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, Swiss National …
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films
B Saini, F Huang, YY Choi, Z Yu, JD Baniecki, V Thampy, W Tsai, ...
Solid-State Electronics 208, 108714, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
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