| ESD behavior of tunnel FET devices NK Kranthi, M Shrivastava IEEE Transactions on Electron Devices 64 (1), 28-36, 2016 | 29 | 2016 |
| Physical insights into the low current ESD failure of LDMOS-SCR and its implication on power scalability NK Kranthi, BS Kumar, A Salman, G Boselli, M Shrivastava 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 15 | 2019 |
| Drain-extended FinFET with embedded SCR (DeFinFET-SCR) for high-voltage ESD protection and self-protected designs M Paul, BS Kumar, KK Nagothu, P Singhal, H Gossner, M Shrivastava IEEE Transactions on Electron Devices 66 (12), 5072-5079, 2019 | 13 | 2019 |
| Performance and reliability co-design of LDMOS-SCR for self-protected high voltage applications on-chip NK Kranthi, BS Kumar, A Salman, G Boselli, M Shrivastava 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 10 | 2019 |
| System-level IEC ESD failures in high-voltage DeNMOS-SCR: Physical insights and design guidelines NK Kranthi, J Di Sarro, R Sankaralingam, G Boselli, M Shrivastava IEEE Transactions on Electron Devices 68 (9), 4242-4250, 2021 | 9 | 2021 |
| Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior NK Kranthi, A Salman, G Boselli, M Shrivastava 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 7 | 2019 |
| On the ESD Behavior of Large-Area CVD Graphene Transistors: Physical Insights and Technology Implications KK Nagothu, A Mishra, A Meersha, M Shrivastava IEEE Transactions on Electron Devices 66 (1), 743-751, 2019 | 6 | 2019 |
| ESD behavior of large area CVD graphene RF transistors: Physical insights and technology implications NK Kranthi, A Mishra, A Meersha, M Shrivastava 2017 IEEE International Reliability Physics Symposium (IRPS), 3F-1.1-3F-1.6, 2017 | 6* | 2017 |
| How to achieve moving current filament in high voltage LDMOS devices: Physical insights & design guidelines for self-protected concepts NK Kranthi, C Garg, BS Kumar, A Salman, G Boselli, M Shrivastava 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 5 | 2020 |
| First demonstration and physical insights into time-dependent breakdown of graphene channel and interconnects A Mishra, A Meersha, NK Kranthi, K Trivedi, HB Variar, NSV Bellamkonda, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 5 | 2019 |
| HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness NK Kranthi, G Boselli, M Shrivastava IEEE Transactions on Electron Devices 69 (3), 1242-1250, 2022 | 4 | 2022 |
| Unified Mechanism for Graphene FET’s Electrothermal Breakdown and Its Implications on Safe Operating Limits A Mishra, A Meersha, NK Kranthi, J Kumar, NSV Bellamkonda, HB Variar, ... IEEE Transactions on Electron Devices 68 (5), 2530-2537, 2021 | 3 | 2021 |
| Insights into the system-level IEC ESD failure in high voltage DeNMOS-SCR for automotive applications NK Kranthi, J Di Sarro, R Sankaralingam, G Boselli, M Shrivastava 2020 42nd Annual EOS/ESD Symposium (EOS/ESD), 1-7, 2020 | 3 | 2020 |
| Defect-assisted safe operating area limits and high current failure in graphene fets NK Kranthi, A Mishra, A Meersha, HB Variar, M Shrivastava 2018 IEEE International Reliability Physics Symposium (IRPS), 3E. 1-1-3E. 1-5, 2018 | 3 | 2018 |
| On the ESD behavior of pentacene channel organic thin film transistors R Sinha, NK Kranthi, S Sambandan, M Shrivastava 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2017 | 3 | 2017 |
| Design insights to address low current ESD failure and power scalability issues in high voltage LDMOS-SCR devices NK Kranthi, BS Kumar, A Salman, G Boselli, M Shrivastava 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 2 | 2020 |
| Current Scalability Issues in Multi-Bank 5V PMOS ESD structures: Root cause and Design Guideline NK Kranthi, Y Xiu, Y Xiao, R Sankaralingam 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | | 2023 |
| Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress M Monishmurali, NK Kranthi, G Boselli, M Shrivastava 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | | 2023 |
| Unique Rise Time Sensitivity Leading to Air Discharge System-Level ESD Failures in Bidirectional High Voltage SCRs NK Kranthi, J Di Sarro, K Rajagopal, H Kunz, R Sankaralingam, G Boselli, ... IEEE Transactions on Electron Devices 69 (5), 2552-2559, 2022 | | 2022 |
| Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices M Monishmurali, NK Kranthi, G Boselli, M Shrivastava 2022 IEEE International Reliability Physics Symposium (IRPS), 6C. 1-1-6C. 1-6, 2022 | | 2022 |
Mayank ShrivastavaIndian Institute of Science Bangalore在 iisc.ac.in 的电子邮件经过验证
