| nBn structure based on InAs∕ GaSb type-II strained layer superlattices JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ... Applied Physics Letters 91 (4), 2007 | 332 | 2007 |
| Strain relief by periodic misfit arrays for low defect density GaSb on GaAs SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ... Applied physics letters 88 (13), 2006 | 313 | 2006 |
| Dependence of critical layer thickness on strain for InxGa1− xAs/GaAs strained‐layer superlattices IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson Applied physics letters 46 (10), 967-969, 1985 | 282 | 1985 |
| Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy PL Gourley, IJ Fritz, LR Dawson Applied physics letters 52 (5), 377-379, 1988 | 225 | 1988 |
| Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures IJ Fritz, PL Gourley, LR Dawson Applied physics letters 51 (13), 1004-1006, 1987 | 177 | 1987 |
| Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna Applied Physics Letters 96 (23), 2010 | 173 | 2010 |
| Mid-IR focal plane array based on type-II InAs∕ GaSb strain layer superlattice detector with nBn design HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 92 (18), 2008 | 148 | 2008 |
| Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions SR Kurtz, RM Biefeld, LR Dawson, KC Baucom, AJ Howard Applied physics letters 64 (7), 812-814, 1994 | 134 | 1994 |
| Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices JE Schirber, IJ Fritz, LR Dawson Applied physics letters 46 (2), 187-189, 1985 | 130 | 1985 |
| High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice N Gautam, S Myers, AV Barve, B Klein, EP Smith, DR Rhiger, LR Dawson, ... Applied Physics Letters 101 (2), 2012 | 121 | 2012 |
| Bias dependent dual band response from InAs∕ Ga (In) Sb type II strain layer superlattice detectors A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ... Applied Physics Letters 91 (26), 2007 | 121 | 2007 |
| Ordering-induced band-gap reduction in InAs 1− x Sb x (x≊ 0.4) alloys and superlattices SR Kurtz, LR Dawson, RM Biefeld, DM Follstaedt, BL Doyle Physical Review B 46 (3), 1909, 1992 | 121 | 1992 |
| III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ... Applied physics letters 89 (16), 2006 | 114 | 2006 |
| wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ... Applied physics letters 84 (12), 2058-2060, 2004 | 108 | 2004 |
| InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers YC Xin, LG Vaughn, LR Dawson, A Stintz, Y Lin, LF Lester, DL Huffaker Journal of applied physics 94 (3), 2133-2135, 2003 | 97 | 2003 |
| Growth mechanisms of highly mismatched AlSb on a Si substrate G Balakrishnan, S Huang, LR Dawson, YC Xin, P Conlin, DL Huffaker Applied Physics Letters 86 (3), 2005 | 94 | 2005 |
| Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation HS Kim, E Plis, A Khoshakhlagh, S Myers, N Gautam, YD Sharma, ... Applied Physics Letters 96 (3), 2010 | 91 | 2010 |
| Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials A Jallipalli, G Balakrishnan, SH Huang, A Khoshakhlagh, LR Dawson, ... Journal of Crystal Growth 303 (2), 449-455, 2007 | 88 | 2007 |
| Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate SH Huang, G Balakrishnan, A Khoshakhlagh, LR Dawson, DL Huffaker Applied Physics Letters 93 (7), 2008 | 87 | 2008 |
| Type II InAs∕ GaSb strain layer superlattice detectors with p-on-n polarity E Plis, JB Rodriguez, HS Kim, G Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 91 (13), 2007 | 78 | 2007 |
