| Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon J Kolodzey, EA Chowdhury, TN Adam, G Qui, I Rau, JO Olowolafe, ... IEEE Transactions on Electron Devices 47 (1), 121-128, 2000 | 270 | 2000 |
| Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films ZE Smith, V Chu, K Shepard, S Aljishi, D Slobodin, J Kolodzey, S Wagner, ... Applied physics letters 50 (21), 1521-1523, 1987 | 210 | 1987 |
| Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73 (15), 2191-2193, 1998 | 205 | 1998 |
| Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy J Kolodzey, PA O’neil, S Zhang, BA Orner, K Roe, KM Unruh, CP Swann, ... Applied physics letters 67 (13), 1865-1867, 1995 | 130 | 1995 |
| Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy JP Gupta, N Bhargava, S Kim, T Adam, J Kolodzey Applied physics letters 102 (25), 2013 | 122 | 2013 |
| Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy N Bhargava, M Coppinger, J Prakash Gupta, L Wielunski, J Kolodzey Applied Physics Letters 103 (4), 2013 | 115 | 2013 |
| Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors J Piprek, T Troger, B Schroter, J Kolodzey, CS Ih IEEE Photonics Technology Letters 10 (1), 81-83, 1998 | 110 | 1998 |
| The electrical properties of MIS capacitors with AlN gate dielectrics T Adam, J Kolodzey, CP Swann, MW Tsao, JF Rabolt Applied Surface Science 175, 428-435, 2001 | 104 | 2001 |
| Fiber optics light switch JS Kolodzey, GR Stilwell Jr, EC Uberbacher US Patent 4,245,886, 1981 | 100 | 1981 |
| Terahertz electroluminescence from boron-doped silicon devices TN Adam, RT Troeger, SK Ray, PC Lv, J Kolodzey Applied physics letters 83 (9), 1713-1715, 2003 | 82 | 2003 |
| Carbon incorporation in alloys grown by molecular beam epitaxy using a single silicon–graphite source MW Dashiell, LV Kulik, D Hits, J Kolodzey, G Watson Applied Physics Letters 72 (7), 833-835, 1998 | 76 | 1998 |
| Electroluminescence at 7 terahertz from phosphorus donors in silicon PC Lv, RT Troeger, TN Adam, S Kim, J Kolodzey, IN Yassievich, ... Applied physics letters 85 (1), 22-24, 2004 | 74 | 2004 |
| Optical and electronic properties of SiGeC alloys grown on Si substrates J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ... Journal of crystal growth 157 (1-4), 386-391, 1995 | 74 | 1995 |
| Semiconductor device with controlled negative differential resistance characteristic JP Leburton, J Kolodzey US Patent 5,021,841, 1991 | 74 | 1991 |
| Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ... IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000 | 72 | 2000 |
| Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson Applied Physics Letters 78 (14), 2073-2075, 2001 | 71 | 2001 |
| Initial stages of trapping in a-Si: H observed by femtosecond spectroscopy PM Fauchet, D Hulin, A Migus, A Antonetti, J Kolodzey, S Wagner Physical review letters 57 (19), 2438, 1986 | 71 | 1986 |
| Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer T Moriyama, R Cao, X Fan, G Xuan, BK Nikolić, Y Tserkovnyak, ... Physical review letters 100 (6), 067602, 2008 | 66 | 2008 |
| Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor J Kolodzey, S Aljishi, R Schwarz, D Slobodin, S Wagner Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (6 …, 1986 | 61 | 1986 |
| Electrical and optical properties of Ge–implanted 4H–SiC G Katulka, C Guedj, J Kolodzey, RG Wilson, C Swann, MW Tsao, J Rabolt Applied physics letters 74 (4), 540-542, 1999 | 57 | 1999 |
