| Intrinsic point defects, impurities, and their diffusion in silicon P Pichler Springer Science & Business Media, 2012 | 448 | 2012 |
| Simulation of critical IC fabrication processes using advanced physical and numerical methods W Jungling, P Pichler, S Selberherr, E Guerrero, HW Potzl IEEE transactions on electron devices 32 (2), 156-167, 1985 | 158 | 1985 |
| Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments M Jacob, P Pichler, H Ryssel, R Falster Journal of applied physics 82 (1), 182-191, 1997 | 96 | 1997 |
| A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon CJ Ortiz, P Pichler, T Fühner, F Cristiano, B Colombeau, NEB Cowern, ... Journal of applied physics 96 (9), 4866-4877, 2004 | 83 | 2004 |
| Determination of aluminum diffusion parameters in silicon O Krause, H Ryssel, P Pichler Journal of Applied Physics 91 (9), 5645-5649, 2002 | 76 | 2002 |
| Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs V Uhnevionak, A Burenkov, C Strenger, G Ortiz, E Bedel-Pereira, V Mortet, ... IEEE Transactions on Electron Devices 62 (8), 2562-2570, 2015 | 74 | 2015 |
| Simulation of critical IC-fabrication steps P Pichler, W Jungling, S Selberherr, E Guerrero, HP Potzl IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1985 | 74 | 1985 |
| Measurements of thermophysical properties of solid and liquid NIST SRM 316L stainless steel P Pichler, BJ Simonds, JW Sowards, G Pottlacher Journal of Materials Science 55 (9), 4081-4093, 2020 | 67 | 2020 |
| Materials Science and Engineering B W Lerch, S Paul, J Niess, S McCoy, T Selinger, J Gelpey, F Cristiano, ... Materials Science and Engineering B 124 (125), 24-31, 2005 | 50 | 2005 |
| Ab Initio Identification of the Nitrogen Diffusion Mechanism in Silicon N Stoddard, P Pichler, G Duscher, W Windl Physical review letters 95 (2), 025901, 2005 | 46 | 2005 |
| Current understanding and modeling of boron-interstitial clusters P Pichler MRS Online Proceedings Library (OPL) 717, C3. 1, 2002 | 42 | 2002 |
| Influence of RTP on vacancy concentrations M Jacob, P Pichler, M Wohs, H Ryssel, R Falster MRS Online Proceedings Library (OPL) 490, 129, 1997 | 41 | 1997 |
| Honeycomb voids due to ion implantation in germanium RJ Kaiser, S Koffel, P Pichler, AJ Bauer, B Amon, A Claverie, ... Thin Solid Films 518 (9), 2323-2325, 2010 | 40 | 2010 |
| Advanced activation of ultra-shallow junctions using flash-assisted RTP W Lerch, S Paul, J Niess, S McCoy, T Selinger, J Gelpey, F Cristiano, ... Materials Science and Engineering: B 124, 24-31, 2005 | 40 | 2005 |
| Anomalous Impurity Segregation and Local Bonding Fluctuation in -Si G Fisicaro, K Huet, R Negru, M Hackenberg, P Pichler, N Taleb, ... Physical Review Letters 110 (11), 117801, 2013 | 39 | 2013 |
| Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions B Colombeau, AJ Smith, NEB Cowern, BJ Pawlak, F Cristiano, R Duffy, ... MRS Online Proceedings Library (OPL) 810, C3. 6, 2004 | 39 | 2004 |
| Germanium substrate loss during thermal processing RJ Kaiser, S Koffel, P Pichler, AJ Bauer, B Amon, L Frey, H Ryssel Microelectronic engineering 88 (4), 499-502, 2011 | 37 | 2011 |
| Distribution and segregation of arsenic at the SiO2/Si interface C Steen, A Martinez-Limia, P Pichler, H Ryssel, S Paul, W Lerch, L Pei, ... Journal of Applied Physics 104 (2), 2008 | 36 | 2008 |
| Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium S Koffel, RJ Kaiser, AJ Bauer, B Amon, P Pichler, J Lorenz, L Frey, ... Microelectronic engineering 88 (4), 458-461, 2011 | 32 | 2011 |
| Radiation-enhanced diffusion during high-temperature ion implantation R Schork, P Pichler, A Kluge, H Ryssel Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1991 | 32 | 1991 |
