| Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ... Microelectronic Engineering 187, 66-77, 2018 | 432 | 2018 |
| An overview of normally-off GaN-based high electron mobility transistors F Roccaforte, G Greco, P Fiorenza, F Iucolano Materials 12 (10), 1599, 2019 | 252 | 2019 |
| Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014 | 175 | 2014 |
| Challenges for energy efficient wide band gap semiconductor power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ... physica status solidi (a) 211 (9), 2063-2071, 2014 | 137 | 2014 |
| Non-stoichiometry in “CaCu 3 Ti 4 O 12”(CCTO) ceramics R Schmidt, S Pandey, P Fiorenza, DC Sinclair RSC advances 3 (34), 14580-14589, 2013 | 111 | 2013 |
| Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review P Fiorenza, F Giannazzo, F Roccaforte Energies 12 (12), 2310, 2019 | 96 | 2019 |
| SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte Applied Physics Letters 103 (15), 2013 | 95 | 2013 |
| Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte Applied Physics Letters 99 (7), 2011 | 80 | 2011 |
| Critical issues for interfaces to p-type SiC and GaN in power devices F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ... Applied Surface Science 258 (21), 8324-8333, 2012 | 73 | 2012 |
| Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3 LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte Applied Physics Letters 101 (19), 2012 | 66 | 2012 |
| Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors P Fiorenza, A Frazzetto, A Guarnera, M Saggio, F Roccaforte Applied Physics Letters 105 (14), 2014 | 62 | 2014 |
| Localized electrical characterization of the giant permittivity effect in CaCu3Ti4O12 ceramics P Fiorenza, R Lo Nigro, C Bongiorno, V Raineri, MC Ferarrelli, ... Applied Physics Letters 92 (18), 2008 | 62 | 2008 |
| Conductive atomic force microscopy studies of thin SiO2 layer degradation P Fiorenza, W Polspoel, W Vandervorst Applied physics letters 88 (22), 2006 | 60 | 2006 |
| Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2as Gate Insulator P Fiorenza, G Greco, F Iucolano, A Patti, F Roccaforte IEEE Transactions on Electron Devices 64 (7), 2893-2899, 2017 | 48 | 2017 |
| Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, ... Applied Physics A 115, 333-339, 2014 | 48 | 2014 |
| Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC E Schilirò, R Lo Nigro, P Fiorenza, F Roccaforte AIP Advances 6 (7), 2016 | 46 | 2016 |
| Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures F Roccaforte, G Greco, P Fiorenza, V Raineri, G Malandrino, R Lo Nigro Applied Physics Letters 100 (6), 2012 | 46 | 2012 |
| Selective doping in silicon carbide power devices F Roccaforte, P Fiorenza, M Vivona, G Greco, F Giannazzo Materials 14 (14), 3923, 2021 | 45 | 2021 |
| Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ... ACS applied materials & interfaces 9 (8), 7761-7771, 2017 | 45 | 2017 |
| Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ... Beilstein journal of nanotechnology 4 (1), 234-242, 2013 | 45 | 2013 |
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi在 imm.cnr.it 的电子邮件经过验证
