Quantum Hall effect in a gate-controlled pn junction of graphene JR Williams, L DiCarlo, CM Marcus Science 317 (5838), 638-641, 2007 | 1285 | 2007 |
Unconventional Josephson effect in hybrid superconductor-topological insulator devices JR Williams, AJ Bestwick, P Gallagher, SS Hong, Y Cui, AS Bleich, ... Physical review letters 109 (5), 056803, 2012 | 434 | 2012 |
Etching of graphene devices with a helium ion beam MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ... ACS nano 3 (9), 2674-2676, 2009 | 395 | 2009 |
Gate-controlled guiding of electrons in graphene JR Williams, T Low, MS Lundstrom, CM Marcus Nature nanotechnology 6 (4), 222-225, 2011 | 262 | 2011 |
Electrolyte Gate-Controlled Kondo Effect in M Lee, JR Williams, S Zhang, CD Frisbie, D Goldhaber-Gordon Physical review letters 107 (25), 256601, 2011 | 202 | 2011 |
Shot noise in graphene L DiCarlo, JR Williams, Y Zhang, DT McClure, CM Marcus Physical Review Letters 100 (15), 156801, 2008 | 180 | 2008 |
Topological Nanomaterials JJC P. Liu, J. R. Williams Nature Reviews Materials 4, 479, 2019 | 171* | 2019 |
Effective cleaning of hexagonal boron nitride for graphene devices AGF Garcia, M Neumann, F Amet, JR Williams, K Watanabe, T Taniguchi, ... Nano letters 12 (9), 4449-4454, 2012 | 162 | 2012 |
Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons JJ Cha, JR Williams, D Kong, S Meister, H Peng, AJ Bestwick, ... Nano letters 10 (3), 1076-1081, 2010 | 159 | 2010 |
Carrier-Controlled Ferromagnetism in P Moetakef, JR Williams, DG Ouellette, AP Kajdos, D Goldhaber-Gordon, ... Physical Review X 2 (2), 021014, 2012 | 155 | 2012 |
Insulating behavior at the neutrality point in single-layer graphene F Amet, JR Williams, K Watanabe, T Taniguchi, D Goldhaber-Gordon Physical review letters 110 (21), 216601, 2013 | 120 | 2013 |
A high-mobility electronic system at an electrolyte-gated oxide surface P Gallagher, M Lee, TA Petach, SW Stanwyck, JR Williams, K Watanabe, ... Nature Communications 6, 2016 | 118 | 2016 |
Composite fermions and broken symmetries in graphene F Amet, AJ Bestwick, JR Williams, L Balicas, K Watanabe, T Taniguchi, ... Nature communications 6 (1), 5838, 2015 | 115 | 2015 |
Selective equilibration of spin-polarized quantum Hall edge states in graphene F Amet, JR Williams, K Watanabe, T Taniguchi, D Goldhaber-Gordon Physical review letters 112 (19), 196601, 2014 | 114 | 2014 |
Snake States along Graphene Junctions JR Williams, CM Marcus Physical review letters 107 (4), 046602, 2011 | 98 | 2011 |
Quantum Hall conductance of two-terminal graphene devices JR Williams, DA Abanin, L DiCarlo, LS Levitov, CM Marcus Physical Review B—Condensed Matter and Materials Physics 80 (4), 045408, 2009 | 98 | 2009 |
Tunneling spectroscopy of graphene-boron-nitride heterostructures F Amet, JR Williams, AGF Garcia, M Yankowitz, K Watanabe, T Taniguchi, ... Physical Review B—Condensed Matter and Materials Physics 85 (7), 073405, 2012 | 95 | 2012 |
Direct measurement of current-phase relations in superconductor/topological insulator/superconductor junctions I Sochnikov, AJ Bestwick, JR Williams, TM Lippman, IR Fisher, ... Nano letters 13 (7), 3086-3092, 2013 | 76 | 2013 |
Gas-phase functionalization of surfaces including carbon-based surfaces RG Gordon, DB Farmer, CM Marcus, JR Williams US Patent 8,119,032, 2012 | 59 | 2012 |
Gate-defined graphene quantum point contact in the quantum hall regime S Nakaharai, JR Williams, CM Marcus Physical review letters 107 (3), 036602, 2011 | 55 | 2011 |