受强制性开放获取政策约束的文章 - SangHoon Shin了解详情
无法在其他位置公开访问的文章：2 篇
Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs
H Jiang, SH Shin, X Liu, X Zhang, MA Alam
2016 IEEE International Reliability Physics Symposium (IRPS), 2A-3-1-2A-3-7, 2016
强制性开放获取政策： US National Science Foundation
Spatio-temporal mapping of device temperature due to self-heating in Sub-22 nm transistors
MA Wahab, SH Shin, MA Alam
2016 IEEE International Reliability Physics Symposium (IRPS), XT-05-1-XT-05-6, 2016
强制性开放获取政策： US National Science Foundation
可在其他位置公开访问的文章：4 篇
The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits
H Jiang, SH Shin, X Liu, X Zhang, MA Alam
IEEE Electron Device Letters 38 (4), 430-433, 2017
强制性开放获取政策： US National Science Foundation, 国家自然科学基金委员会
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits
W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA Alam
Microelectronics Reliability 81, 262-273, 2018
强制性开放获取政策： US National Science Foundation
Proton-doped strongly correlated perovskite nickelate memory devices
K Ramadoss, F Zuo, Y Sun, Z Zhang, J Lin, U Bhaskar, S Shin, MA Alam, ...
IEEE Electron Device Letters 39 (10), 1500-1503, 2018
强制性开放获取政策： US Department of Defense
Anomalous bias temperature instability on accumulation-mode Ge and III-V MOSFETs
M Si, H Wu, SH Shin, W Luo, NJ Conrad, W Wu, J Zhang, MA Alam, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-5.1-6A-5.6, 2017
强制性开放获取政策： US Department of Defense
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