| Structural, electric modulus and complex impedance analysis of ZnO/TiO2 composite ceramics R Ben Belgacem, M Chaari, AF Braña, BJ Garcia, A Matoussi Journal of the American Ceramic Society 100 (5), 2045-2058, 2017 | 38 | 2017 |
| Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys J Plaza, JL Castaño, BJ García, H Carrère, E Bedel-Pereira Applied Physics Letters 86 (12), 121918, 2005 | 36 | 2005 |
| Directional dependence of the second harmonic response in two-dimensional nonlinear photonic crystals P Molina, MO Ramirez, BJ Garcia, LE Bausa Applied Physics Letters 96 (26), 261111, 2010 | 34 | 2010 |
| High efficiency Si solar cells characterization using impedance spectroscopy analysis AF Braña, E Forniés, N López, BJ García Journal of Physics: Conference Series 647 (1), 012069, 2015 | 31 | 2015 |
| Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy C García Núñez, AF Braña, JL Pau, D Ghita, BJ García, G Shen, ... Journal of Applied Physics 115 (3), 034307, 2014 | 26 | 2014 |
| Enhanced fabrication process of zinc oxide nanowires for optoelectronics CG Núñez, JL Pau, E Ruíz, AG Marín, BJ García, J Piqueras, G Shen, ... Thin Solid Films 555, 42-47, 2014 | 22 | 2014 |
| Single GaAs nanowire based photodetector fabricated by dielectrophoresis CG Núñez, AF Braña, N López, JL Pau, BJ García Nanotechnology 31 (22), 225604, 2020 | 21 | 2020 |
| Laser melting of GaAs covered with thin metal layers BJ Garcia, J Martinez, J Piqueras Applied Physics A 51, 437-445, 1990 | 20 | 1990 |
| Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy CG Núñez, AF Braña, JL Pau, D Ghita, BJ García, G Shen, DS Wilbert, ... Journal of crystal growth 372, 205-212, 2013 | 18 | 2013 |
| Preparation and passivation of GaAs(001) surfaces for growing organic molecules AMB N Nicoara, I Cerrillo, D Xueming, JM García, B García, C Gómez-Navarro ... Nanotechnology 13 (3), 352 -356, 2002 | 15 | 2002 |
| A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxy C Garcia Nunez, AF Braña, N López, BJ García Nano letters 18 (6), 3608-3615, 2018 | 14 | 2018 |
| Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium M Aït‐Lhouss, JL Castaño, BJ García, J Piqueras Journal of applied physics 78 (9), 5834-5836, 1995 | 14 | 1995 |
| GaAs nanowires grown by Ga-assisted chemical beam epitaxy: Substrate preparation and growth kinetics CG Núñez, AF Braña, N López, BJ García Journal of Crystal Growth 430, 108-115, 2015 | 13 | 2015 |
| ion shift under domain inversion by electron beam writing in P Molina, D Sarkar, MO Ramirez, J García Solé, LE Bausa, BJ Garcia, ... Applied physics letters 90 (14), 141901, 2007 | 13 | 2007 |
| Automated system for surface photovoltage spectroscopy Y González, A Abelenda, O De Melo, C Calvo-Mola, L García-Pelayo, ... Review of Scientific Instruments 92 (1), 2021 | 8 | 2021 |
| Photoluminescence-free photoreflectance spectra using dual frequency modulation J Plaza, D Ghita, JL Castaño, BJ Garcia Journal of Applied Physics 102 (9), 093507, 2007 | 8 | 2007 |
| Molecular beam epitaxial growth and optical characterization of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates BJ Garcia, C Fontaine, A Muñoz‐Yagüe Applied physics letters 63 (19), 2691-2693, 1993 | 8 | 1993 |
| Raman and point contact current-voltage characterization of laser-induced diffusion in GaAs J Jiménez, E Martín, BJ García, J Piqueras Applied Physics A 55, 566-572, 1992 | 8 | 1992 |
| Ge diffusion into GaAs by pulsed laser irradiation BJ Garcia, J Martinez, J Piqueras, JL Castaño, A Muñoz-Yagüe Applied Physics A 46, 191-196, 1988 | 8 | 1988 |
| Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy K Ben Saddik, AF Braña, N López, W Walukiewicz, BJ García Journal of Applied Physics 126 (10), 105704, 2019 | 7 | 2019 |
Carlos García NúñezLecturer in Electronics and Nanoscale Engineering, University of Glasgow在 glasgow.ac.uk 的电子邮件经过验证
