| Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend T Leydecker, M Herder, E Pavlica, G Bratina, S Hecht, E Orgiu, P Samorì Nature nanotechnology 11 (9), 769-775, 2016 | 339 | 2016 |
| Optically switchable transistor via energy-level phototuning in a bicomponent organic semiconductor E Orgiu, N Crivillers, M Herder, L Grubert, M Pätzel, J Frisch, E Pavlica, ... Nature chemistry 4 (8), 675-679, 2012 | 274 | 2012 |
| Local interface composition and band discontinuities in heterovalent heterostructures R Nicolini, L Vanzetti, G Mula, G Bratina, L Sorba, A Franciosi, M Peressi, ... Physical review letters 72 (2), 294, 1994 | 164 | 1994 |
| Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles L Sorba, G Bratina, G Ceccone, A Antonini, JF Walker, M Micovic, ... Physical Review B 43 (3), 2450, 1991 | 138 | 1991 |
| The effect of polymer molecular weight on the performance of PTB7-Th: O-IDTBR non-fullerene organic solar cells SF Hoefler, T Rath, N Pastukhova, E Pavlica, D Scheunemann, S Wilken, ... Journal of Materials Chemistry A 6 (20), 9506-9516, 2018 | 99 | 2018 |
| Highly active photocatalytic coatings prepared by a low-temperature method M Kete, E Pavlica, F Fresno, G Bratina, UL Štangar Environmental Science and Pollution Research 21, 11238-11249, 2014 | 81 | 2014 |
| A nanomesh scaffold for supramolecular nanowire optoelectronic devices L Zhang, X Zhong, E Pavlica, S Li, A Klekachev, G Bratina, TW Ebbesen, ... Nature Nanotechnology 11 (10), 900-906, 2016 | 80 | 2016 |
| Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures L Sorba, G Bratina, A Antonini, A Franciosi, L Tapfer, A Migliori, P Merli Physical Review B 46 (11), 6834, 1992 | 64 | 1992 |
| Behavior of the (0 0 0 1) surface of sapphire upon high-temperature annealing PR Ribič, G Bratina Surface science 601 (1), 44-49, 2007 | 61 | 2007 |
| Multiresponsive nonvolatile memories based on optically switchable ferroelectric organic field‐effect transistors M Carroli, AG Dixon, M Herder, E Pavlica, S Hecht, G Bratina, E Orgiu, ... Advanced Materials 33 (14), 2007965, 2021 | 60 | 2021 |
| Influence of transfer residue on the optical properties of chemical vapor deposited graphene investigated through spectroscopic ellipsometry A Matković, U Ralević, M Chhikara, MM Jakovljević, D Jovanović, ... Journal of Applied Physics 114 (9), 2013 | 56 | 2013 |
| Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures G Biasiol, L Sorba, G Bratina, R Nicolini, A Franciosi, M Peressi, S Baroni, ... Physical review letters 69 (8), 1283, 1992 | 56 | 1992 |
| Growth of ultrathin pentacene films on polymeric substrates PR Ribič, V Kalihari, CD Frisbie, G Bratina Physical Review B 80 (11), 115307, 2009 | 52 | 2009 |
| Photo-induced intramolecular charge transfer in an ambipolar field-effect transistor based on a π-conjugated donor–acceptor dyad R Pfattner, E Pavlica, M Jaggi, SX Liu, S Decurtins, G Bratina, J Veciana, ... Journal of Materials Chemistry C 1 (25), 3985-3988, 2013 | 50 | 2013 |
| AlAs-GaAs heterojunction engineering by means of Group-IV elemental interface layers G Bratina, L Sorba, A Antonini, G Biasiol, A Franciosi Physical Review B 45 (8), 4528, 1992 | 46 | 1992 |
| Self‐suspended nanomesh scaffold for ultrafast flexible photodetectors based on organic semiconducting crystals L Zhang, N Pasthukova, Y Yao, X Zhong, E Pavlica, G Bratina, E Orgiu, ... Advanced Materials 30 (28), 1801181, 2018 | 39 | 2018 |
| Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors F Otón, R Pfattner, E Pavlica, Y Olivier, E Moreno, J Puigdollers, G Bratina, ... Chemistry of Materials 23 (3), 851-861, 2011 | 38 | 2011 |
| Epitaxial growth and interface parameters of Si layers on GaAs (001) and AlAs (001) substrates G Bratina, L Sorba, A Antonini, L Vanzetti, A Franciosi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 37 | 1991 |
| Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge (001), Ge-GaAs (001), and ZnSe-GaAs (001) G Bratina, L Vanzetti, L Sorba, G Biasiol, A Franciosi, M Peressi, S Baroni Physical Review B 50 (16), 11723, 1994 | 36 | 1994 |
| The influence of LiF layer abd ZnO nanoparticels addings on the performances of flexible photovoltaic cells based on polymer blends A Radu, S Iftimie, V Ghenescu, C Besleaga, VA Antohe, G Bratina, L Ion, ... Digest Journal of Nanomaterials and Biostructures 6 (3), 1141-1148, 2011 | 35 | 2011 |
Lucia SORBANEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore在 sns.it 的电子邮件经过验证
