| Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization LÅ Ragnarsson, Z Li, J Tseng, T Schram, E Rohr, MJ Cho, T Kauerauf, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 312 | 2009 |
| Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective V Subramanian, B Parvais, J Borremans, A Mercha, D Linten, P Wambacq, ... IEEE Transactions on Electron Devices 53 (12), 3071-3079, 2006 | 191 | 2006 |
| 3D stacked IC demonstration using a through silicon via first approach J Van Olmen, A Mercha, G Katti, C Huyghebaert, J Van Aelst, E Seppala, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 181 | 2008 |
| Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession T Chiarella, L Witters, A Mercha, C Kerner, M Rakowski, C Ortolland, ... Solid-State Electronics 54 (9), 855-860, 2010 | 160 | 2010 |
| Impact of fin width on digital and analog performances of n-FinFETs V Subramanian, A Mercha, B Parvais, J Loo, C Gustin, M Dehan, ... Solid-State Electronics 51 (4), 551-559, 2007 | 115 | 2007 |
| Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems D Flandre, S Adriaensen, A Akheyar, A Crahay, L Demeûs, P Delatte, ... Solid-State Electronics 45 (4), 541-549, 2001 | 114 | 2001 |
| Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology D Yakimets, MG Bardon, D Jang, P Schuddinck, Y Sherazi, P Weckx, ... 2017 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2017 | 105 | 2017 |
| A low-power 57-to-66GHz transceiver in 40nm LP CMOS with− 17dB EVM at 7Gb/s V Vidojkovic, G Mangraviti, K Khalaf, V Szortyka, K Vaesen, W Van Thillo, ... 2012 IEEE International Solid-State Circuits Conference, 268-270, 2012 | 99 | 2012 |
| A low-power radio chipset in 40nm LP CMOS with beamforming for 60GHz high-data-rate wireless communication V Vidojkovic, V Szortyka, K Khalaf, G Mangraviti, S Brebels, W Van Thillo, ... 2013 IEEE International Solid-State Circuits Conference Digest of Technical …, 2013 | 88 | 2013 |
| Double-gate FinFETs as a CMOS technology downscaling option: An RF perspective S Nuttinck, B Parvais, G Curatola, A Mercha IEEE Transactions on electron Devices 54 (2), 279-283, 2007 | 88 | 2007 |
| Physical model of low-temperature to cryogenic threshold voltage in MOSFETs A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz IEEE Journal of the Electron Devices Society 8, 780-788, 2020 | 81 | 2020 |
| Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs V Subramaniana, B Parvais, J Borremans, A Mercha, D Linten, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 80 | 2005 |
| Dependence of FinFET RF performance on fin width D Lederer, B Parvais, A Mercha, N Collaert, M Jurczak, JP Raskin, ... Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated …, 2006 | 77 | 2006 |
| MoM simulation of signal-to-noise patterns in infinite and finite receiving antenna arrays C Craeye, B Parvais, X Dardenne IEEE Transactions on Antennas and Propagation 52 (12), 3245-3256, 2004 | 71 | 2004 |
| A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ... Microelectronics Reliability 81, 186-194, 2018 | 64 | 2018 |
| The potential of FinFETs for analog and RF circuit applications P Wambacq, B Verbruggen, K Scheir, J Borremans, M Dehan, D Linten, ... IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2541-2551, 2007 | 64 | 2007 |
| Scalable and multibias high frequency modeling of multi-fin FETs G Crupi, D Schreurs, B Parvais, A Caddemi, A Mercha, S Decoutere Solid-state electronics 50 (11-12), 1780-1786, 2006 | 63 | 2006 |
| CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance U Peralagu, A Alian, V Putcha, A Khaled, R Rodriguez, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2019 | 61 | 2019 |
| A 42 mW 200 fs-jitter 60 GHz sub-sampling PLL in 40 nm CMOS V Szortyka, Q Shi, K Raczkowski, B Parvais, M Kuijk, P Wambacq IEEE Journal of Solid-State Circuits 50 (9), 2025-2036, 2015 | 61 | 2015 |
| 21.4 A 42mW 230fs-jitter sub-sampling 60GHz PLL in 40nm CMOS V Szortyka, Q Shi, K Raczkowski, B Parvais, M Kuijk, P Wambacq 2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014 | 60 | 2014 |
Nadine Collaertimec在 imec.be 的电子邮件经过验证
