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Huacheng Ye
Huacheng Ye
在 wdc.com 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Oxide defect engineering enables to couple solar energy into oxygen activation
N Zhang, X Li, H Ye, S Chen, H Ju, D Liu, Y Lin, W Ye, C Wang, Q Xu, ...
Journal of the American Chemical Society 138 (28), 8928-8935, 2016
9152016
Back-end-of-line compatible transistors for monolithic 3-D integration
S Datta, S Dutta, B Grisafe, J Smith, S Srinivasa, H Ye
IEEE micro 39 (6), 8-15, 2019
1062019
Detection of sub-fM DNA with target recycling and self-assembly amplification on graphene field-effect biosensors
Z Gao, H Xia, J Zauberman, M Tomaiuolo, J Ping, Q Zhang, P Ducos, ...
Nano letters 18 (6), 3509-3515, 2018
992018
Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory
S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020
962020
BEOL compatible dual-gate ultra thin-body W-doped indium-oxide transistor with Ion= 370μA/μm, SS= 73mV/dec and Ion/Ioff Ratio> 4× 109
W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni, S Datta
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
662020
BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with Ion= 370µA/µm, SS= 73mV/dec and Ion/Ioff ratio> 4x109
W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni, S Datta
Symposium on VLSI Technology, 2020
66*2020
Double-gate W-doped amorphous indium oxide transistors for monolithic 3D capacitorless gain cell eDRAM
H Ye, J Gomez, W Chakraborty, S Spetalnick, S Dutta, K Ni, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.3. 1-28.3. 4, 2020
562020
Logic compatible high-performance ferroelectric transistor memory
S Dutta, H Ye, AA Khandker, SG Kirtania, A Khanna, K Ni, S Datta
IEEE Electron Device Letters 43 (3), 382-385, 2022
542022
Low thermal budget (< 250° C) dual-gate amorphous indium tungsten oxide (IWO) thin-film transistor for monolithic 3-D integration
W Chakraborty, H Ye, B Grisafe, I Lightcap, S Datta
IEEE Transactions on Electron Devices 67 (12), 5336-5342, 2020
512020
Examination of the interplay between polarization switching and charge trapping in ferroelectric FET
S Deng, Z Jiang, S Dutta, H Ye, W Chakraborty, S Kurinec, S Datta, K Ni
2020 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2020
482020
A novel ferroelectric superlattice based multi-level cell non-volatile memory
K Ni, J Smith, H Ye, B Grisafe, GB Rayner, A Kummel, S Datta
2019 IEEE International Electron Devices Meeting (IEDM), 28.8. 1-28.8. 4, 2019
402019
Equivalent oxide thickness (EOT) scaling with hafnium zirconium oxide high-κ dielectric near morphotropic phase boundary
K Ni, A Saha, W Chakraborty, H Ye, B Grisafe, J Smith, GB Rayner, ...
2019 IEEE international electron devices meeting (IEDM), 7.4. 1-7.4. 4, 2019
402019
BEOL-compatible superlattice FEFET analog synapse with improved linearity and symmetry of weight update
KA Aabrar, SG Kirtania, FX Liang, J Gomez, M San Jose, Y Luo, H Ye, ...
IEEE Transactions on Electron Devices 69 (4), 2094-2100, 2022
332022
BEOL compatible superlattice FerroFET-based high precision analog weight cell with superior linearity and symmetry
KA Aabrar, J Gomez, SG Kirtania, M San Jose, Y Luo, PG Ravikumar, ...
2021 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2021
272021
Graphene transistor arrays functionalized with genetically engineered antibody fragments for Lyme disease diagnosis
Z Gao, P Ducos, H Ye, J Zauberman, A Sriram, X Yang, Z Wang, ...
2D Materials 7 (2), 024001, 2020
222020
Lifelong learning with monolithic 3D ferroelectric ternary content-addressable memory
S Dutta, A Khanna, H Ye, MM Sharifi, A Kazemi, M San Jose, KA Aabrar, ...
2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021
162021
Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In2 O3 for High-Performance Enhancement Mode BEOL …
Y Hu, H Ye, KA Aabrar, SG Kirtania, W Chakraborty, S Datta, K Cho
2022 International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2022
52022
Computational associative memory based on monolithically integrated metal-oxide thin film transistors for update-frequent search applications
Z Zhao, J Gomez, H Ye, M Imani, X Yin, S Deng, B Melanson, J Zhang, ...
2021 IEEE International Electron Devices Meeting (IEDM), 37.6. 1-37.6. 4, 2021
52021
First-principles investigation of amorphous n-type In2 O3 for BEOL transistor
Y Hu, W Chakraborty, H Ye, S Datta, K Cho
2021 International Conference on Simulation of Semiconductor Processes and …, 2021
32021
BEOL Compatible Ferroelectric Routers for Run-time Reconfigurable Compute-in-Memory Accelerators
A Khanna, H Ye, Y Luo, G Bajpai, M San Jose, W Chakraborty, S Yu, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
22022
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