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Gang Hee Han
Gang Hee Han
在 inu.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Recent development of two-dimensional transition metal dichalcogenides and their applications
W Choi, N Choudhary, GH Han, J Park, D Akinwande, YH Lee
Materials Today 20 (3), 116-130, 2017
24302017
Synthesis of large‐area graphene layers on poly‐nickel substrate by chemical vapor deposition: wrinkle formation
SJ Chae, F Güneş, KK Kim, ES Kim, GH Han, SM Kim, HJ Shin, SM Yoon, ...
Advanced materials 21 (22), 2328-2333, 2009
10612009
Influence of copper morphology in forming nucleation seeds for graphene growth
GH Han, F Gunes, JJ Bae, ES Kim, SJ Chae, HJ Shin, JY Choi, D Pribat, ...
Nano letters 11 (10), 4144-4148, 2011
4912011
Probing graphene grain boundaries with optical microscopy
DL Duong, GH Han, SM Lee, F Gunes, ES Kim, ST Kim, H Kim, QH Ta, ...
Nature 490 (7419), 235-239, 2012
4502012
Layer-by-layer doping of few-layer graphene film
F Gunes, HJ Shin, C Biswas, GH Han, ES Kim, SJ Chae, JY Choi, YH Lee
ACS nano 4 (8), 4595-4600, 2010
3822010
van der Waals metallic transition metal dichalcogenides
GH Han, DL Duong, DH Keum, SJ Yun, YH Lee
Chemical reviews 118 (13), 6297-6336, 2018
3062018
Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations
GH Han, NJ Kybert, CH Naylor, BS Lee, J Ping, JH Park, J Kang, SY Lee, ...
Nature communications 6 (1), 6128, 2015
3062015
Fano Resonance and Spectrally Modified Photoluminescence Enhancement in Monolayer MoS2 Integrated with Plasmonic Nanoantenna Array
B Lee, J Park, GH Han, HS Ee, CH Naylor, W Liu, ATC Johnson, ...
Nano letters 15 (5), 3646-3653, 2015
3042015
Control of electronic structure of graphene by various dopants and their effects on a nanogenerator
HJ Shin, WM Choi, D Choi, GH Han, SM Yoon, HK Park, SW Kim, YW Jin, ...
Journal of the American Chemical Society 132 (44), 15603-15609, 2010
2862010
Heat dissipation of transparent graphene defoggers
JJ Bae, SC Lim, GH Han, YW Jo, DL Doung, ES Kim, SJ Chae, TQ Huy, ...
Advanced Functional Materials 22 (22), 4819-4826, 2012
2812012
Biexciton Emission from Edges and Grain Boundaries of Triangular WS2 Monolayers
MS Kim, SJ Yun, Y Lee, C Seo, GH Han, KK Kim, YH Lee, J Kim
ACS nano 10 (2), 2399-2405, 2016
2622016
Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability
SC Lim, JH Jang, DJ Bae, GH Han, S Lee, IS Yeo, YH Lee
Applied Physics Letters 95 (26), 2009
2542009
Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS2
A Steinhoff, JH Kim, F Jahnke, M Rosner, DS Kim, C Lee, GH Han, ...
Nano letters 15 (10), 6841-6847, 2015
2282015
Large Work Function Modulation of Monolayer MoS2 by Ambient Gases
SY Lee, UJ Kim, JG Chung, H Nam, HY Jeong, GH Han, H Kim, HM Oh, ...
Acs Nano 10 (6), 6100-6107, 2016
2262016
Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries
TH Ly, DJ Perello, J Zhao, Q Deng, H Kim, GH Han, SH Chae, HY Jeong, ...
Nature communications 7 (1), 10426, 2016
2122016
Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition
GH Han, JA Rodríguez-Manzo, CW Lee, NJ Kybert, MB Lerner, ZJ Qi, ...
Acs Nano 7 (11), 10129-10138, 2013
2102013
Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils
SJ Yun, SH Chae, H Kim, JC Park, JH Park, GH Han, JS Lee, SM Kim, ...
ACS nano 9 (5), 5510-5519, 2015
2002015
Small hysteresis nanocarbon-based integrated circuits on flexible and transparent plastic substrate
WJ Yu, SY Lee, SH Chae, D Perello, GH Han, M Yun, YH Lee
Nano letters 11 (3), 1344-1350, 2011
1672011
Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain.
BG Shin, GH Han, SJ Yun, HM Oh, JJ Bae, YJ Song, CY Park, YH Lee
Advanced Materials (Deerfield Beach, Fla.) 28 (42), 9378-9384, 2016
1652016
Absorption spectroscopy of surfactant-dispersed carbon nanotube film: modulation of electronic structures
HZ Geng, DS Lee, KK Kim, GH Han, HK Park, YH Lee
Chemical Physics Letters 455 (4-6), 275-278, 2008
1632008
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