| Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs RTP Lee, TY Liow, KM Tan, AEJ Lim, CS Ho, KM Hoe, MY Lai, ... 2007 IEEE Symposium on VLSI Technology, 108-109, 2007 | 240 | 2007 |
| Scaling challenges for advanced CMOS devices AP Jacob, R Xie, MG Sung, L Liebmann, RTP Lee, B Taylor International Journal of High Speed Electronics and Systems 26 (01n02), 1740001, 2017 | 120 | 2017 |
| Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement TY Liow, KM Tan, R Lee, A Du, CH Tung, G Samudra, WJ Yoo, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 56-57, 2006 | 109 | 2006 |
| Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon Source and Drain Stressors With High Carbon Content TY Liow, KM Tan, D Weeks, RTP Lee, M Zhu, KM Hoe, CH Tung, M Bauer, ... IEEE Transactions on Electron Devices 55 (9), 2475-2483, 2008 | 93 | 2008 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 65 | 2017 |
| Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in Au-free technology DW Johnson, RTP Lee, RJW Hill, MH Wong, G Bersuker, EL Piner, ... IEEE transactions on electron devices 60 (10), 3197-3203, 2013 | 65 | 2013 |
| Nickel-silicide: carbon contact technology for n-channel MOSFETs with silicon–carbon source/drain RTP Lee, LT Yang, TY Liow, KM Tan, AEJ Lim, KW Ang, DMY Lai, ... IEEE electron device letters 29 (1), 89-92, 2007 | 59 | 2007 |
| N-channel FinFETs with 25-nm gate length and Schottky-barrier source and drain featuring ytterbium silicide RTP Lee, AEJ Lim, KM Tan, TY Liow, GQ Lo, GS Samudra, DZ Chi, ... IEEE electron device letters 28 (2), 164-167, 2007 | 59 | 2007 |
| Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ... IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013 | 53 | 2013 |
| Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕ n-(001) Ge contact DZ Chi, RTP Lee, SJ Chua, SJ Lee, S Ashok, DL Kwong Journal of applied physics 97 (11), 2005 | 49 | 2005 |
| Strained p-Channel FinFETs With Extended-Shaped Silicon–Germanium Source and Drain Stressors KM Tan, TY Liow, RTP Lee, KM Hoe, CH Tung, N Balasubramanian, ... IEEE electron device letters 28 (10), 905-908, 2007 | 41 | 2007 |
| ETB-QW InAs MOSFET with scaled body for improved electrostatics TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ... 2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012 | 40 | 2012 |
| Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors TY Liow, KM Tan, RTP Lee, M Zhu, KM Hoe, GS Samudra, ... IEEE Electron Device Letters 29 (1), 80-82, 2007 | 32 | 2007 |
| N-channel (110)-sidewall strained FinFETs with silicon–carbon source and drain stressors and tensile capping layer TY Liow, KM Tan, RTP Lee, CH Tung, GS Samudra, N Balasubramanian, ... IEEE electron device letters 28 (11), 1014-1017, 2007 | 32 | 2007 |
| Enhanced morphological stability of NiGe films formed using Ni (Zr) alloy SL Liew, RTP Lee, KY Lee, B Balakrisnan, SY Chow, MY Lai, DZ Chi Thin Solid Films 504 (1-2), 104-107, 2006 | 31 | 2006 |
| Relays do not leak: CMOS does H Fariborzi, F Chen, R Nathanael, IR Chen, L Hutin, R Lee, TJK Liu, ... Proceedings of the 50th Annual Design Automation Conference, 1-4, 2013 | 29 | 2013 |
| A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET KM Tan, M Zhu, WW Fang, M Yang, TY Liow, RTP Lee, KM Hoe, CH Tung, ... IEEE electron device letters 29 (2), 192-194, 2008 | 29 | 2008 |
| Effects of Ti incorporation in Ni on silicidation reaction and structural/electrical properties of NiSi RTP Lee, DZ Chi, MY Lai, NL Yakovlev, SJ Chua Journal of the Electrochemical Society 151 (9), G642, 2004 | 29 | 2004 |
| Sulfur-induced PtSi: C/Si: C Schottky barrier height lowering for realizing n-channel FinFETs with reduced external resistance RTP Lee, AEJ Lim, KM Tan, TY Liow, DZ Chi, YC Yeo IEEE electron device letters 30 (5), 472-474, 2009 | 26 | 2009 |
| Carrier transport characteristics of sub-30 nm strained n-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement TY Liow, KM Tan, HC Chin, RTP Lee, CH Tung, GS Samudra, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 26 | 2006 |
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