Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu Optics express 19 (104), A991-A1007, 2011 | 628 | 2011 |
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers J Zhang, H Zhao, N Tansu Applied Physics Letters 97 (11), 111105-111105-3, 2010 | 227 | 2010 |
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes H Zhao, G Liu, J Zhang, RA Arif, N Tansu Journal of Display Technology 9 (4), 212-225, 2013 | 207 | 2013 |
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes J Zhang, N Tansu Journal of Applied Physics 110 (11), 113110-113110-5, 2011 | 188 | 2011 |
III-nitride photonics N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee Photonics Journal, IEEE 2 (2), 241-248, 2010 | 178 | 2010 |
Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum wells light-emitting diodes G Liu, J Zhang, CK Tan, N Tansu IEEE Photonics Journal 5 (2), 2201011, 2013 | 167 | 2013 |
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes J Zhang, H Zhao, N Tansu Applied Physics Letters 98 (17), 171111-171111-3, 2011 | 141 | 2011 |
Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates J Zhang, N Tansu IEEE Photonics Journal 5 (2), 2600111, 2013 | 131 | 2013 |
Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates J Zhang, N Tansu | 131* | |
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes H Zhao, J Zhang, G Liu, N Tansu Applied Physics Letters 98 (15), 151115-151115-3, 2011 | 115 | 2011 |
FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays P Zhu, G Liu, J Zhang, N Tansu Journal of Display Technology 9 (5), 317-323, 2013 | 114 | 2013 |
First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters CK Tan, J Zhang, XH Li, G Liu, BO Tayo, N Tansu Journal of Display Technology 9 (4), 272-279, 2013 | 108 | 2013 |
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed TiO Microsphere Arrays XH Li, P Zhu, G Liu, J Zhang, R Song, YK Ee, P Kumnorkaew, JF Gilchrist, ... Journal of Display Technology 9 (5), 324-332, 2013 | 96 | 2013 |
Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition H Tong, J Zhang, G Liu, JA Herbsommer, GS Huang, N Tansu Applied Physics Letters 97 (11), 112105-112105-3, 2010 | 86 | 2010 |
Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents J Zhang, H Tong, G Liu, JA Herbsommer, GS Huang, N Tansu Journal of Applied Physics 109 (5), 053706-053706-6, 2011 | 82 | 2011 |
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography G Liu, H Zhao, J Zhang, JH Park, LJ Mawst, N Tansu Nanoscale research letters 6 (1), 1-10, 2011 | 76 | 2011 |
234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, HG Xing, D Jena, J Zhang Applied Physics Letters 112, 011101, 2018 | 73 | 2018 |
Investigation of fast and slow decays in InGaN/GaN quantum wells G Sun, G Xu, YJ Ding, H Zhao, G Liu, J Zhang, N Tansu Applied Physics Letters 99 (8), 081104-081104-3, 2011 | 64 | 2011 |
Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates G Liu, J Zhang, XH Li, GS Huang, T Paskova, KR Evans, H Zhao, N Tansu Journal of Crystal Growth 340 (1), 66-73, 2012 | 62 | 2012 |
Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes C Liu, YK Ooi, SM Islam, J Verma, HG Xing, D Jena, J Zhang Applied Physics Letters 110, 071103, 2017 | 57 | 2017 |