Quantum computational advantage with a programmable photonic processor LS Madsen, F Laudenbach, MF Askarani, F Rortais, T Vincent, ... Nature 606 (7912), 75-81, 2022 | 672 | 2022 |
Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge (111) interface S Oyarzún, AK Nandy, F Rortais, JC Rojas-Sánchez, MT Dau, P Noël, ... Nature communications 7 (1), 13857, 2016 | 50 | 2016 |
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance MT Dau, C Vergnaud, A Marty, F Rortais, C Beigné, H Boukari, ... Applied Physics Letters 110 (1), 2017 | 42 | 2017 |
Imaging spin diffusion in germanium at room temperature C Zucchetti, F Bottegoni, C Vergnaud, F Ciccacci, G Isella, L Ghirardini, ... Physical Review B 96 (1), 014403, 2017 | 32 | 2017 |
Spin transport in p-type germanium F Rortais, S Oyarzún, F Bottegoni, JC Rojas-Sánchez, P Laczkowski, ... Journal of Physics: Condensed Matter 28 (16), 165801, 2016 | 32 | 2016 |
Non-local electrical spin injection and detection in germanium at room temperature F Rortais, C Vergnaud, A Marty, L Vila, JP Attané, J Widiez, C Zucchetti, ... Applied Physics Letters 111 (18), 2017 | 25 | 2017 |
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve S Lee, F Rortais, R Ohshima, Y Ando, S Miwa, Y Suzuki, H Koike, ... Physical Review B 99 (6), 064408, 2019 | 22 | 2019 |
Spin-to-charge conversion for hot photoexcited electrons in germanium C Zucchetti, F Bottegoni, G Isella, M Finazzi, F Rortais, C Vergnaud, ... Physical Review B 97 (12), 125203, 2018 | 22 | 2018 |
Spin diffusion in Pt as probed by optically generated spin currents F Bottegoni, A Ferrari, F Rortais, C Vergnaud, A Marty, G Isella, M Finazzi, ... Physical Review B 92 (21), 214403, 2015 | 19 | 2015 |
Electrical spin injection in silicon and the role of defects F Rortais, C Vergnaud, C Ducruet, C Beigné, A Marty, JP Attané, J Widiez, ... Physical Review B 94 (17), 174426, 2016 | 15 | 2016 |
Spin-orbit coupling induced by bismuth doping in silicon thin films F Rortais, S Lee, R Ohshima, S Dushenko, Y Ando, M Shiraishi Applied Physics Letters 113 (12), 2018 | 13 | 2018 |
Investigation of gating effect in Si spin MOSFET S Lee, F Rortais, R Ohshima, Y Ando, M Goto, S Miwa, Y Suzuki, H Koike, ... Applied Physics Letters 116 (2), 2020 | 12 | 2020 |
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi Scientific Reports 9 (1), 17032, 2019 | 12 | 2019 |
Introduction and pinning of domain walls in 50 nm NiFe constrictions using local and external magnetic fields G Zahnd, VT Pham, A Marty, M Jamet, C Beigné, L Notin, C Vergnaud, ... Journal of Magnetism and Magnetic Materials 406, 166-170, 2016 | 11 | 2016 |
Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi NPG Asia Materials 13 (1), 13, 2021 | 10 | 2021 |
Optical orientation and inverse spin Hall effect as effective tools to investigate spin-dependent diffusion M Finazzi, F Bottegoni, C Zucchetti, M Bollani, A Ballabio, J Frigerio, ... Electronics 5 (4), 80, 2016 | 10 | 2016 |
Observation of the Hanle effect in giant magnetoresistance measurements G Zahnd, L Vila, VT Pham, F Rortais, M Cosset-Cheneau, C Vergnaud, ... Applied Physics Letters 112 (23), 2018 | 7 | 2018 |
Spin–Charge Conversion Phenomena in Germanium S Oyarzún, F Rortais, JC Rojas-Sánchez, F Bottegoni, P Laczkowski, ... Journal of the Physical Society of Japan 86 (1), 011002, 2017 | 4 | 2017 |
Bias current dependence of spin accumulation voltage in n-Si spin MOSFET S Lee, H Koike, M Goto, S Miwa, Y Suzuki, F Rortais, E Shigematsu, ... 한국자기학회 학술연구발표회 논문개요집 31 (2), 321-322, 2022 | | 2022 |
Towards barrier-free contacts to monolayer transition metal dichalcogenides S Gupta, F Rortais, R Ohshima, Y Ando, Y Miyata, M Shiraishi Spintronics XIII 11470, 114702O, 2020 | | 2020 |