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Vahid Mirkhani
Vahid Mirkhani
在 auburn.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Raman and X‐ray photoelectron spectroscopy investigation of the effect of gamma‐ray irradiation on MoS2
B Ozden, MP Khanal, J Park, S Uprety, V Mirkhani, K Yapabandara, K Kim, ...
Micro & Nano Letters 12 (4), 271-274, 2017
262017
Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)
MP Khanal, S Uprety, V Mirkhani, S Wang, K Yapabandara, E Hassani, ...
Journal of Applied Physics 124 (21), 2018
222018
Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low‐voltage operation
J Jiang, MA Kuroda, AC Ahyi, T Isaacs‐Smith, V Mirkhani, M Park, S Dhar
physica status solidi (a) 212 (10), 2219-2225, 2015
222015
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
MP Khanal, B Ozden, K Kim, S Uprety, V Mirkhani, K Yapabandara, ...
Journal of Vacuum Science & Technology B 35 (3), 2017
212017
On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO
V Mirkhani, K Yapabandara, S Wang, MP Khanal, S Uprety, MS Sultan, ...
Thin Solid Films 672, 152-156, 2019
152019
Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
K Yapabandara, V Mirkhani, S Wang, MP Khanal, S Uprety, ...
Microelectronics Reliability 91, 262-268, 2018
92018
Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si
B Ozden, C Yang, F Tong, MP Khanal, V Mirkhani, MH Sk, AC Ahyi, ...
Applied Physics Letters 105 (17), 2014
92014
Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures
S Wang, V Mirkhani, K Yapabandara, R Cheng, G Hernandez, MP Khanal, ...
Journal of Applied Physics 123 (16), 2018
82018
Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements
B Ozden, MP Khanal, S Youn, V Mirkhani, K Yapabandara, M Park, ...
ECS Journal of Solid State Science and Technology 5 (4), P3206, 2016
82016
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors
V Mirkhani, S Wang, K Yapabandara, MS Sultan, MP Khanal, S Uprety, ...
Semiconductor Science and Technology 36 (10), 105011, 2021
72021
Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers
K Yapabandara, V Mirkhani, MS Sultan, B Ozden, MP Khanal, M Park, ...
Journal of Vacuum Science & Technology B 35 (3), 2017
62017
The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors
S Wang, S Uprety, V Mirkhani, D Hanggi, K Yapabandara, MP Khanal, ...
Solid-State Electronics 191, 108270, 2022
42022
Control of light scattering with nanoparticles and/or coatings
HF Greer, RM Briggs, S Sihan, SS Harried, T Lee, R Lobaton, V Mirkhani
US Patent App. 16/516,925, 2020
42020
Time-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers
B Ozden, MP Khanal, V Mirkhani, K Yapabandara, C Yang, S Ko, S Youn, ...
Journal of Nanoscience and Nanotechnology 16 (7), 7630-7634, 2016
42016
Analysis of the effect of gamma-ray irradiation and low-temperature characteristics of sol-gel derived ZnO thin-film transistors
S Wang, V Mirkhani, K Yapabandara, S Ko, MH Sk, M Park, MC Hamilton
2015 73rd Annual Device Research Conference (DRC), 171-172, 2015
42015
Simulation of the refractive index of Ga doped ZnO nanoparticles embedded in PEDOT: PSS using effective medium approximations
V Mirkhani, F Tong, D Song, Y Chung, B Ozden, K Yapabandara, ...
Journal of Nanoscience and Nanotechnology 16 (7), 7358-7362, 2016
32016
304 channel MicroLED based CMOS transceiver IC with aggregate 1 Tbps and sub-pJ per bit capability
B Pezeshki, S Rangarajan, A Tselikov, E Afifi, I Huang, J Pepper, S Zou, ...
2024 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2024
22024
Enhancement of electrical characteristics of a‐ZTO TFTs based on channel layers produced with alternating precursor concentration
S Uprety, D Hanggi, K Yapabandara, V Mirkhani, MP Khanal, B Schoenek, ...
Electronics Letters 54 (22), 1298-1300, 2018
22018
Gamma-ray irradiation effect on sol-gel derived zinc tin oxide thin film transistors
S Wang, S Uprety, V Mirkhani, D Hanggi, K Yapabandara, M Khanal, ...
APS March Meeting Abstracts 2018, T60. 120, 2018
12018
Enhancement of the electrical characteristics of thin-film transistors with multi-stack zinc tin oxide channel layers produced with 2 different solution concentrations
S Uprety, S Wang, D Hanggi, K Yapabandara, V Mirkhani, M Khanal, ...
APS March Meeting Abstracts 2018, T60. 047, 2018
12018
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