| Quantum cascade lasers emitting near 2.6 μm O Cathabard, R Teissier, J Devenson, JC Moreno, AN Baranov Applied Physics Letters 96 (14), 2010 | 198 | 2010 |
| Room temperature operation of InAs∕ AlSb quantum cascade lasers R Teissier, D Barate, A Vicet, C Alibert, AN Baranov, X Marcadet, ... Applied physics letters 85 (2), 167-169, 2004 | 120 | 2004 |
| InAs∕ AlSb quantum cascade lasers emitting below 3μm J Devenson, R Teissier, O Cathabard, AN Baranov Applied physics letters 90 (11), 2007 | 119 | 2007 |
| Trace gas detection with antimonide-based quantum-well diode lasers A Vicet, DA Yarekha, A Pérona, Y Rouillard, S Gaillard, AN Baranov Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 58 (11 …, 2002 | 111 | 2002 |
| InAs∕ AlSb quantum cascade lasers emitting at 2.75–2.97 μm J Devenson, O Cathabard, R Teissier, AN Baranov Applied Physics Letters 91 (25), 2007 | 110 | 2007 |
| High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 µm DA Yarekha, G Glastre, A Perona, Y Rouillard, F Genty, EM Skouri, ... Electronics Letters 36 (6), 537-539, 2000 | 102 | 2000 |
| Quantum cascade lasers grown on silicon H Nguyen-Van, AN Baranov, Z Loghmari, L Cerutti, JB Rodriguez, ... Scientific reports 8 (1), 7206, 2018 | 91 | 2018 |
| Very short wavelength (λ= 3.1–3.3 μm) quantum cascade lasers J Devenson, D Barate, O Cathabard, R Teissier, AN Baranov Applied Physics Letters 89 (19), 2006 | 85 | 2006 |
| Semiconductor lasers: Fundamentals and applications A Baranov, E Tournié Elsevier, 2013 | 82 | 2013 |
| Powerful mid-infrared light emitting diodes for pollution monitoring AA Popov, VV Sherstnev, YP Yakovlev, AN Baranov, C Alibert Electronics Letters 33 (1), 86-88, 1997 | 81 | 1997 |
| Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures AN Baranov, N Bertru, Y Cuminal, G Boissier, C Alibert, A Joullie Applied physics letters 71 (6), 735-737, 1997 | 80 | 1997 |
| Free-space communication with directly modulated mid-infrared quantum cascade devices O Spitz, P Didier, L Durupt, DA Díaz-Thomas, AN Baranov, L Cerutti, ... IEEE Journal of Selected Topics in Quantum Electronics 28 (1: Semiconductor …, 2021 | 78 | 2021 |
| Sb-based monolithic VCSEL operating near 2.2 µm at room temperature AN Baranov, Y Rouillard, G Boissier, P Grech, S Gaillard, C Alibert Electronics Letters 34 (3), 281-282, 1998 | 78 | 1998 |
| Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 µm AN Baranov, M Bahriz, R Teissier Optics express 24 (16), 18799-18806, 2016 | 63 | 2016 |
| Mid-infrared semiconductor lasers: a review E Tournie, AN Baranov Semiconductors and Semimetals 86, 183-226, 2012 | 63 | 2012 |
| Influence of the material parameters on quantum cascade devices E Benveniste, A Vasanelli, A Delteil, J Devenson, R Teissier, A Baranov, ... Applied Physics Letters 93 (13), 2008 | 63 | 2008 |
| High temperature operation of λ≈ 3.3 μm quantum cascade lasers J Devenson, O Cathabard, R Teissier, AN Baranov Applied physics letters 91 (14), 2007 | 63 | 2007 |
| Tunable diode laser absorption spectroscopy of carbon monoxide around 2.35 μm JC Nicolas, AN Baranov, Y Cuminal, Y Rouillard, C Alibert Applied optics 37 (33), 7906-7911, 1998 | 59 | 1998 |
| Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy E Luna, B Satpati, JB Rodriguez, AN Baranov, E Tournié, A Trampert Applied Physics Letters 96 (2), 2010 | 58 | 2010 |
| Experimental observation of whispering gallery modes in sector disk lasers AM Monakhov, VV Sherstnev, AP Astakhova, YP Yakovlev, G Boissier, ... Applied Physics Letters 94 (5), 2009 | 58 | 2009 |
