| Ultraclean surface processing of silicon wafers: secrets of VLSI manufacturing T Hattori, S Heusler, JP Webb, T Hattori Springer Science & Business Media, 2013 | 179 | 2013 |
| Composition, chemical structure, and electronic band structure of rare earth oxide/Si (1 0 0) interfacial transition layer T Hattori, T Yoshida, T Shiraishi, K Takahashi, H Nohira, S Joumori, ... Microelectronic Engineering 72 (1-4), 283-287, 2004 | 124 | 2004 |
| Contamination Removal by Single‐Wafer Spin Cleaning with Repetitive Use of Ozonized Water and Dilute HF T Hattori, T Osaka, A Okamoto, K Saga, H Kuniyasu Journal of the Electrochemical Society 145 (9), 3278, 1998 | 80 | 1998 |
| Contamination control: Problems and prospects T Hattori Solid State Technology 33 (7), S1-S1, 1990 | 80 | 1990 |
| Influence of silicon-wafer loading ambients in an oxidation furnace on the gate oxide degradation due to organic contamination K Saga, T Hattori Applied physics letters 71 (25), 3670-3672, 1997 | 66 | 1997 |
| Method of cleaning substrate K Saga, S Koyata, T Hattori US Patent 5,679,171, 1997 | 64 | 1997 |
| Electrical conduction and thermoelectricity of La2NiO4+ δ and La2 (Ni, Co) O4+ δ S Nishiyama, D Sakaguchi, T Hattori Solid state communications 94 (4), 279-282, 1995 | 60 | 1995 |
| Influence of Surface Organic Contamination on the Incubation Time in Low‐Pressure Chemical Vapor Deposition K Saga, T Hattori Journal of the Electrochemical Society 144 (9), L253, 1997 | 49 | 1997 |
| Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication K Saga, T Hattori Solid State Phenomena 134, 97-103, 2008 | 41 | 2008 |
| Detection of 30–40-nm particles on bulk-silicon and SOI wafers using deep UV laser scattering A Okamoto, H Kuniyasu, T Hattori IEEE Transactions on semiconductor manufacturing 19 (4), 372-380, 2006 | 39 | 2006 |
| Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si (1 0 0) interfacial transition layer H Nohira, T Shiraishi, K Takahashi, T Hattori, I Kashiwagi, C Ohshima, ... Applied surface science 234 (1-4), 493-496, 2004 | 37 | 2004 |
| Elimination of stacking faults in silicon by trichloroethylene oxidation T Hattori Journal of the Electrochemical Society 123 (6), 945, 1976 | 35 | 1976 |
| Damage-Free Ultradiluted HF∕ Nitrogen Jet Spray Cleaning for Particle Removal with Minimal Silicon and Oxide Loss H Hirano, K Sato, T Osaka, H Kuniyasu, T Hattori Electrochemical and solid-state letters 9 (2), G62, 2005 | 34 | 2005 |
| Non-aqueous/dry cleaning technology without causing damage to fragile nano-structures T Hattori ECS Transactions 25 (5), 3, 2009 | 27 | 2009 |
| Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films S Shinagawa, H Nohira, T Ikuta, M Hori, M Kase, T Hattori Microelectronic engineering 80, 98-101, 2005 | 27 | 2005 |
| X-ray photoelectron spectroscopy study on interface structures formed by three kinds of atomic oxygen at 300 °C M Shioji, T Shiraishi, K Takahashi, H Nohira, K Azuma, Y Nakata, ... Applied physics letters 84 (19), 3756-3758, 2004 | 26 | 2004 |
| Acceleration of organic contaminant adsorption onto silicon surfaces in the presence of residual fluorine K Saga, T Hattori Journal of the Electrochemical Society 144 (9), L250, 1997 | 26 | 1997 |
| Chemical and electronic structure of SiO2/Si interfacial transition layer T Hattori, K Takahashi, MB Seman, H Nohira, K Hirose, N Kamakura, ... Applied surface science 212, 547-555, 2003 | 25 | 2003 |
| Detection and identification of particles on silicon surfaces T Hattori Particles on Surfaces, 201-218, 2020 | 23 | 2020 |
| Influence of initial wafer cleanliness on metal removal efficiency in immersion SC-1 cleaning: Limitation of immersion-type wet cleaning T Osaka, T Hattori IEEE Transactions on semiconductor Manufacturing 11 (1), 20-24, 1998 | 22 | 1998 |
