受强制性开放获取政策约束的文章 - Ravikiran Lingaparthi了解详情
无法在其他位置公开访问的文章：1 篇
Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
R Lingaparthi, N Dharmarasu, K Radhakrishnan, A Ranjan, TLA Seah, ...
Applied Physics Letters 118 (12), 2021
强制性开放获取政策： National Research Foundation, Singapore
可在其他位置公开访问的文章：3 篇
GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
IEEE Sensors Journal 17 (1), 72-77, 2016
强制性开放获取政策： A*Star, Singapore
Non-linear thermal resistance model for the simulation of high power GaN-based devices
S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ...
Semiconductor Science and Technology 36 (5), 055002, 2021
强制性开放获取政策： Government of Spain
Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si (111)
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
Semiconductor Science and Technology 31 (9), 095003, 2016
强制性开放获取政策： A*Star, Singapore
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