受强制性开放获取政策约束的文章 - Zhouchangwan Yu了解详情
无法在其他位置公开访问的文章：4 篇
Reduced HfO₂ Resistive Memory Variability by Inserting a Thin SnO₂ as Oxygen Stopping Layer
WC Chen, S Qin, Z Yu, HSP Wong
IEEE Electron Device Letters 42 (12), 1778-1781, 2021
强制性开放获取政策： US Department of Defense
Potassium hydroxide mixed with lithium hydroxide: An advanced electrolyte for oxygen evolution reaction
T Han, Y Shi, Z Yu, B Shin, M Lanza
Solar Rrl 3 (10), 1900195, 2019
强制性开放获取政策： 国家自然科学基金委员会
Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited HafniaZirconia Alloys
PCMI Zhouchangwan Yu, Balreen Saini, Yunzhi Liu, Fei Huang, Apurva Mehta ...
ACS Applied Materials & Interfaces, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy
CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications
Z Yu, B Saini, PJ Liao, YK Chang, V Hou, CH Nien, YC Shih, SH Yeong, ...
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy, Swiss National …
可在其他位置公开访问的文章：9 篇
Electronic synapses made of layered two-dimensional materials
Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ...
Nature Electronics 1 (8), 458-465, 2018
强制性开放获取政策： US National Science Foundation, 国家自然科学基金委员会
Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm gate length
G Pitner, Z Zhang, Q Lin, SK Su, C Gilardi, C Kuo, H Kashyap, T Weiss, ...
2020 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2020
强制性开放获取政策： US National Science Foundation, Swiss National Science Foundation, US …
High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with …
Z Lin, M Si, YC Luo, X Lyu, A Charnas, Z Chen, Z Yu, W Tsai, PC McIntyre, ...
2021 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2021
强制性开放获取政策： US Department of Defense
Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors
B Saini, F Huang, YY Choi, Z Yu, V Thampy, JD Baniecki, W Tsai, ...
Advanced Electronic Materials 9 (6), 2300016, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ...
Advanced Electronic Materials 8 (7), 2101258, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors
F Huang, M Passlack, Z Yu, Q Lin, A Babadi, VDH Hou, PC McIntyre, ...
IEEE Electron Device Letters 43 (2), 212-215, 2021
强制性开放获取政策： US National Science Foundation, Swiss National Science Foundation
Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
F Huang, B Saini, Z Yu, C Yoo, V Thampy, X He, JD Baniecki, W Tsai, ...
ACS Applied Materials & Interfaces 15 (43), 50246-50253, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, Swiss National …
Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier
R Islam, S Qin, S Deshmukh, Z Yu, C Köroğlu, AI Khan, K Schauble, ...
Applied Physics Letters 121 (8), 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films
B Saini, F Huang, YY Choi, Z Yu, JD Baniecki, V Thampy, W Tsai, ...
Solid-State Electronics 208, 108714, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
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