| Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys MV Fischetti, SE Laux Journal of Applied Physics 80 (4), 2234-2252, 1996 | 1894 | 1996 |
| Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects MV Fischetti, SE Laux Physical Review B 38 (14), 9721, 1988 | 1301 | 1988 |
| Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport MV Fischetti IEEE transactions on electron devices 38 (3), 634-649, 1991 | 816 | 1991 |
| Monte Carlo study of electron transport in silicon inversion layers MV Fischetti, SE Laux Physical Review B 48 (4), 2244, 1993 | 620 | 1993 |
| Electron states in a GaAs quantum dot in a magnetic field A Kumar, SE Laux, F Stern Physical Review B 42 (8), 5166, 1990 | 608 | 1990 |
| Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure SE Laux, DJ Frank, F Stern Surface Science 196 (1-3), 101-106, 1988 | 476 | 1988 |
| Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go? Laux, Fischetti 1992 International Technical Digest on Electron Devices Meeting, 553-556, 1992 | 428 | 1992 |
| Techniques for small-signal analysis of semiconductor devices SE Laux IEEE Transactions on Electron Devices 32 (10), 2028-2037, 1985 | 355 | 1985 |
| Understanding hot‐electron transport in silicon devices: Is there a shortcut? MV Fischetti, SE Laux, E Crabbe Journal of Applied Physics 78 (2), 1058-1087, 1995 | 292 | 1995 |
| Electron states in narrow gate‐induced channels in Si SE Laux, F Stern Applied physics letters 49 (2), 91-93, 1986 | 283 | 1986 |
| Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model MK Ieong, PM Solomon, SE Laux, HSP Wong, D Chidambarrao International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 247 | 1998 |
| Monte Carlo analysis of semiconductor devices: The DAMOCLES program SE Laux, MV Fischetti, DJ Frank IBM Journal of Research and Development 34 (4), 466-494, 1990 | 189 | 1990 |
| Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability MV Fischetti, SE Laux Journal of Applied Physics 89 (2), 1205-1231, 2001 | 188 | 2001 |
| Effective barrier heights of mixed phase contacts: Size effects JL Freeouf, TN Jackson, SE Laux, JM Woodall Applied physics letters 40 (7), 634-636, 1982 | 175 | 1982 |
| Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects SE Laux, A Kumar, MV Fischetti Journal of applied physics 95 (10), 5545-5582, 2004 | 154 | 2004 |
| Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K SE Laux, MV Fischetti IEEE electron device letters 9 (9), 467-469, 1988 | 138 | 1988 |
| Capacitance oscillations in one-dimensional electron systems TP Smith III, H Arnot, JM Hong, CM Knoedler, SE Laux, H Schmid Physical review letters 59 (24), 2802, 1987 | 136 | 1987 |
| Size dependence of’’effective’’barrier heights of mixed‐phase contacts JL Freeouf, TN Jackson, SE Laux, JM Woodall Journal of Vacuum Science and Technology 21 (2), 570-573, 1982 | 124 | 1982 |
| The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors EF Crabbe, JMC Stork, G Baccarani, MV Fischetti, SE Laux International Technical Digest on Electron Devices, 463-466, 1990 | 109 | 1990 |
| Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model MV Fischetti, S Jin, TW Tang, P Asbeck, Y Taur, SE Laux, M Rodwell, ... Journal of computational electronics 8, 60-77, 2009 | 99 | 2009 |
