受强制性开放获取政策约束的文章 - Aranya Goswami了解详情
无法在其他位置公开访问的文章：2 篇
Horizontal heterojunction integration via template-Assisted selective epitaxy
ST Šuran Brunelli, A Goswami, B Markman, HY Tseng, M Rodwell, ...
Crystal Growth & Design 19 (12), 7030-7035, 2019
强制性开放获取政策： US National Science Foundation
Quantum yield in polymer wrapped single walled carbon nanotubes: a computational model
DM Djokić, A Goswami
Nanotechnology 28 (46), 465204, 2017
强制性开放获取政策： Swiss National Science Foundation
可在其他位置公开访问的文章：11 篇
Antiphase boundary free InP microridges on (001) silicon by selective area heteroepitaxy
B Shi, A Goswami, AA Taylor, ST Suran Brunelli, C Palmstrøm, J Klamkin
Crystal Growth & Design 20 (12), 7761-7770, 2020
强制性开放获取政策： US Department of Defense
Selective and confined epitaxial growth development for novel nano-scale electronic and photonic device structures
ST Šuran Brunelli, B Markman, A Goswami, HY Tseng, S Choi, ...
Journal of Applied Physics 126 (1), 2019
强制性开放获取政策： US National Science Foundation
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
S Chatterjee, S Khalid, HS Inbar, A Goswami, FC de Lima, A Sharan, ...
Physical Review B 99 (12), 125134, 2019
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
S Chatterjee, S Khalid, HS Inbar, A Goswami, T Guo, YH Chang, E Young, ...
Science Advances 7 (16), eabe8971, 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz fmax
B Markman, STŠ Brunelli, A Goswami, M Guidry, MJW Rodwell
IEEE Journal of the Electron Devices Society 8, 930-934, 2020
强制性开放获取政策： US Department of Defense
Sn/InAs Josephson junctions on selective area grown nanowires with in situ shadowed superconductor evaporation
A Goswami, SR Mudi, C Dempsey, P Zhang, H Wu, B Zhang, WJ Mitchell, ...
Nano Letters 23 (16), 7311-7318, 2023
强制性开放获取政策： US National Science Foundation, Agence Nationale de la Recherche
Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth
A Goswami, ST Šuran Brunelli, B Markman, AA Taylor, HY Tseng, ...
Physical Review Materials 4 (12), 123403, 2020
强制性开放获取政策： US National Science Foundation
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler
S Chatterjee, FC de Lima, JA Logan, Y Fang, H Inbar, A Goswami, ...
Physical Review Materials 5 (12), 124207, 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties
A Goswami, B Markman, STŠ Brunelli, S Chatterjee, J Klamkin, ...
Journal of Applied Physics 130 (8), 2021
强制性开放获取政策： US National Science Foundation
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
AP McFadden, A Goswami, M Seas, CRH McRae, R Zhao, DP Pappas, ...
Journal of Applied Physics 128 (11), 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
Quantum Hall states emerging from linear magnetoresistance in a topological half-Heusler semimetal
S Chatterjee, FC de Lima, JA Logan, Y Fang, H Inbar, A Goswami, ...
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
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