| The Coexistence of Threshold and Memory Switching Characteristics of ALD HfO2 Memristor Synaptic Arrays for Energy-Efficient Neuromorphic Computing H Abbas, Y Abbas, G Hassan, AS Sokolov, YR Jeon, B Ku, CJ Kang, ... Nanoscale 12 (26), 14120-14134, 2020 | 109 | 2020 |
| Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems M Ismail, H Abbas, C Choi, S Kim Applied Surface Science 529, 147107, 2020 | 69 | 2020 |
| Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices H Abbas, A Ali, J Jung, Q Hu, MR Park, HH Lee, TS Yoon, CJ Kang Applied Physics Letters 114 (9), 2019 | 68 | 2019 |
| Compliance current-controlled conducting filament formation in tantalum oxide-based RRAM devices with different top electrodes TS Lee, NJ Lee, H Abbas, HH Lee, TS Yoon, CJ Kang ACS Applied Electronic Materials 2 (4), 1154-1161, 2020 | 66 | 2020 |
| Towards engineering in memristors for emerging memory and neuromorphic computing: A review AS Sokolov, H Abbas, Y Abbas, C Choi Journal of Semiconductors 41 (1), 013101, 2021 | 63 | 2021 |
| Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer M Ismail, H Abbas, C Choi, S Kim Journal of Alloys and Compounds 835, 155256, 2020 | 54 | 2020 |
| Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ... ACS applied materials & interfaces 12 (30), 33908-33916, 2020 | 53 | 2020 |
| A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications H Abbas, Y Abbas, SN Truong, KS Min, MR Park, J Cho, TS Yoon, ... Semiconductor Science and Technology 32 (6), 065014, 2017 | 49 | 2017 |
| Cellulose Nanocrystal Based Bio‐Memristor as a Green Artificial Synaptic Device for Neuromorphic Computing Applications T Hussain, H Abbas, C Youn, H Lee, T Boynazarov, B Ku, YR Jeon, ... Advanced Materials Technologies 7, 2100744, 2021 | 41 | 2021 |
| Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing M Ismail, H Abbas, A Sokolov, C Mahata, C Choi, S Kim Ceramics International 47 (21), 30764-30776, 2021 | 40 | 2021 |
| Dependence of InGaZnO and SnO2 Thin Film Stacking Sequence for the Resistive Switching Characteristics of Conductive Bridge Memory Devices A Ali, Y Abbas, H Abbas, YR Jeon, S Hussain, BA Naqvi, C Choi, J Jung Applied Surface Science 525, 146390, 2020 | 38 | 2020 |
| Synaptic Characteristics of Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor G Dastgeer, H Abbas, D Young Kim, J Eom, C Choi physica status solidi (RRL)–Rapid Research Letters 15, 2000473, 2021 | 35 | 2021 |
| Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses M Ismail, C Mahata, H Abbas, C Choi, S Kim Journal of Alloys and Compounds 862, 158416, 2021 | 34 | 2021 |
| Conductive bridge random access memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications H Abbas, J Li, DS Ang Micromachines 13 (5), 725, 2022 | 31 | 2022 |
| Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices MR Park, Y Abbas, H Abbas, Q Hu, TS Lee, YJ Choi, TS Yoon, HH Lee, ... Microelectronic Engineering 159, 190-197, 2016 | 31 | 2016 |
| Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses A Ali, H Abbas, M Hussain, SHA Jaffery, S Hussain, C Choi, J Jung Nano Research 15, 2263–2277, 2022 | 30 | 2022 |
| Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices H Abbas, MR Park, Y Abbas, Q Hu, TS Kang, TS Yoon, CJ Kang Japanese Journal of Applied Physics 57 (6S1), 06HC03, 2018 | 23 | 2018 |
| Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure Q Hu, MR Park, H Abbas, TS Kang, TS Yoon, CJ Kang Microelectronic Engineering 190, 7-10, 2018 | 23 | 2018 |
| Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage M Ismail, H Abbas, C Mahata, C Choi, S Kim Journal of Materials Science & Technology 106, 98-107, 2022 | 18 | 2022 |
| Resistive switching characteristics of Ag/MnO/CeO 2/Pt heterostructures memory devices Q Hu, TS Kang, H Abbas, TS Lee, NJ Lee, MR Park, TS Yoon, CJ Kang Microelectronic Engineering 189, 28-32, 2017 | 18 | 2017 |
Changhwan ChoiHanyang University, Materials Science and Engineering在 hanyang.ac.kr 的电子邮件经过验证
