Valence-band anticrossing in mismatched III-V semiconductor alloys K Alberi, J Wu, W Walukiewicz, KM Yu, OD Dubon, SP Watkins, CX Wang, ... Physical review B 75 (4), 045203, 2007 | 473 | 2007 |
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/> 6 V MW Dvorak, CR Bolognesi, OJ Pitts, SP Watkins IEEE Electron Device Letters 22 (8), 361-363, 2001 | 234 | 2001 |
Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy J Hu, XG Xu, JAH Stotz, SP Watkins, AE Curzon, MLW Thewalt, N Matine, ... Applied Physics Letters 73 (19), 2799-2801, 1998 | 204 | 1998 |
InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs CR Bolognesi, MMW Dvorak, P Yeo, XG Xu, SP Watkins IEEE Transactions on Electron Devices 48 (11), 2631-2639, 2001 | 99 | 2001 |
Heavily carbon-doped GaAsSb grown on InP for HBT applications SP Watkins, OJ Pitts, C Dale, XG Xu, MW Dvorak, N Matine, CR Bolognesi Journal of Crystal growth 221 (1-4), 59-65, 2000 | 92 | 2000 |
Low‐temperature photoluminescence of epitaxial InAs Y Lacroix, CA Tran, SP Watkins, MLW Thewalt Journal of applied physics 80 (11), 6416-6424, 1996 | 85 | 1996 |
Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction CR Bolognesi, N Matine, RW Dvorak, XG Xu, J Hu, SP Watkins IEEE Electron Device Letters 20 (4), 155-157, 1999 | 77 | 1999 |
Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm D Lackner, OJ Pitts, M Steger, A Yang, MLW Thewalt, SP Watkins Applied Physics Letters 95 (8), 2009 | 73 | 2009 |
InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations D Lackner, M Steger, MLW Thewalt, OJ Pitts, YT Cherng, SP Watkins, ... Journal of Applied Physics 111 (3), 2012 | 72 | 2012 |
Metalorganic chemical vapor deposition of high‐purity GaAs using tertiarybutylarsine G Haacke, SP Watkins, H Burkhard Applied physics letters 54 (20), 2029-2031, 1989 | 68 | 1989 |
Lithium and lithium-carbon isoelectronic complexes in silicon: Luminescence-decay-time, absorption, isotope-splitting, and Zeeman measurements EC Lightowlers, LT Canham, G Davies, MLW Thewalt, SP Watkins Physical Review B 29 (8), 4517, 1984 | 65 | 1984 |
Geometric limits of coherent III-V core/shell nanowires O Salehzadeh, KL Kavanagh, SP Watkins Journal of Applied Physics 114 (5), 2013 | 54 | 2013 |
Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium G Haacke, SP Watkins, H Burkhard Applied physics letters 56 (5), 478-480, 1990 | 52 | 1990 |
Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine SP Watkins, G Haacke Applied physics letters 59 (18), 2263-2265, 1991 | 50 | 1991 |
Isoelectronic bound excitons in In-and T1-doped Si: A novel semiconductor defect SP Watkins, MLW Thewalt, T Steiner Physical Review B 29 (10), 5727, 1984 | 49 | 1984 |
Metalorganic vapor phase epitaxy of high-quality and its application to heterostructure bipolar transistors XG Xu, J Hu, SP Watkins, N Matine, MW Dvorak, CR Bolognesi Applied physics letters 74 (7), 976-978, 1999 | 47 | 1999 |
Rectifying characteristics of Te-doped GaAs nanowires O Salehzadeh, MX Chen, KL Kavanagh, SP Watkins Applied Physics Letters 99 (18), 2011 | 46 | 2011 |
Photoluminescence lifetime, absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon MLW Thewalt, SP Watkins, UO Ziemelis, EC Lightowlers, MO Henry Solid State Communications 44 (5), 573-577, 1982 | 45 | 1982 |
Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications D Lackner, OJ Pitts, S Najmi, P Sandhu, KL Kavanagh, A Yang, M Steger, ... Journal of crystal growth 311 (14), 3563-3567, 2009 | 42 | 2009 |
Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes L Zheng, X Zhang, Y Zeng, SR Tatavarti, SP Watkins, CR Bolognesi, ... IEEE Photonics Technology Letters 17 (3), 651-653, 2005 | 42 | 2005 |